ADF4157 AD [Analog Devices], ADF4157 Datasheet - Page 3

• Manufacturer Part Number: ADF4157
• Description: High Resolution 6 GHz Fractional-N Frequency Synthesizer
• Manufacturer: AD [Analog Devices]

SPECIFICATIONS
AV
dBm referred to 50 Ω.
Table 1.
Parameter
RF CHARACTERISTICS (3 V)
REFERENCE CHARACTERISTICS
PHASE DETECTOR
CHARGE PUMP
LOGIC INPUTS
LOGIC OUTPUTS
POWER SUPPLIES
NOISE CHARACTERISTICS
1
2
3
4
5
6
7
Operating temperature of B version is −40°C to +85°C.
AC-coupling ensures AV
Guaranteed by design. Sample tested to ensure compliance.
This figure can be used to calculate phase noise for any application. Use the formula –207 + 10log(f
at the VCO output.
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20logN (where N is the N divider value).
The phase noise is measured with the EVAL-ADF4157EB1Z and the Agilent E5052A phase noise system.
f
REFIN
RF Input Frequency (RF
REF
REF
REF
REF
Phase Detector Frequency
I
I
Matching
I
I
V
V
I
C
V
V
V
AV
DV
V
I
Low Power Sleep Mode
Phase Noise Figure of Merit
ADF4157 Phase Noise Floor
Phase Noise Performance
CP
CP
CP
CP
INH
DD
DD
INH
INL
OH
OH
OL
P
IN
High Value
Low Value
Absolute Accuracy
R
5800 MHz Output
Three-State Leakage Current
= 100 MHz; f
Sink/Source
vs. V
vs. Temperature
, Input Capacitance
DD
/I
DD
, Output Low Voltage
, Input Low Voltage
, Output High Voltage
, Output High Voltage
= DV
IN
IN
IN
IN
SET
, Input High Voltage
INL
Input Frequency
Input Sensitivity
Input Capacitance
Input Current
, Input Current
Range
CP
DD
= 2.7 V to 3.3 V; V
PFD
= 25 MHz; offset frequency = 2 kHz; RF
DD
7
/2 bias.
IN
)
6
3
4
5
P
= AV
B Version
0.5/6.0
10/300
0.4/AV
0.7/AV
10
±100
32
5
312.5
2.5
2.7/10
1
2
2
2
1.4
0.6
±1
10
1.4
VDD – 0.4
0.4
2.7/3.3
AV
AV
29
10
−207
−137
−133
−87
DD
DD
DD
/5.5
to 5.5 V; AGND = DGND = 0 V; T
DD
DD
1
OUT
= 5800.25 MHz; N = 232; loop bandwidth = 20 kHz.
Unit
GHz min/max
MHz min/max
V p-p min/max
V p-p min/max
pF max
μA max
MHz max
mA typ
μA typ
% typ
kΩ min/max
nA typ
% typ
% typ
% typ
V min
V max
μA max
pF max
V min
V min
V max
V min/V max
V min/V max
mA max
μA typ
dBc/Hz typ
dBc/Hz typ
dBc/Hz typ
dBc/Hz typ
Rev. 0 | Page 3 of 20
Test Conditions/Comments
−10 dBm/0 dBm min/max. For lower frequencies, ensure slew
rate (SR) > 400 V/μs.
For f < 10 MHz, ensure slew rate > 50 V/μs.
For 10 MHz < REF
For 250 MHz < REF
Programmable.
With R
With R
Sink and source current.
0.5 V < V
0.5 V < V
V
Open-drain 1 kΩ pull-up to 1.8 V.
CMOS output chosen.
I
23 mA typical.
@ 10 MHz PFD frequency.
@ 25 MHz PFD frequency.
@ VCO output.
@ 2 kHz offset, 25 MHz PFD frequency.
OL
CP
A
= 500 μA.
= V
= T
SET
SET
P
/2.
MIN
PFD
CP
CP
= 5.1 kΩ.
= 5.1 kΩ.
) + 20logN to calculate in-band phase noise performance as seen
< V
< V
to T
P
P
– 0.5.
– 0.5.
MAX
IN
IN
, unless otherwise noted;
< 250 MHz. Biased at AV
< 300 MHz. Biased at AV
DD
DD
/2
/2
2
.
2
.
ADF4157