NAND01G-A STMICROELECTRONICS [STMicroelectronics], NAND01G-A Datasheet - Page 36

• Manufacturer Part Number: NAND01G-A
• Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Table 19. DC Characteristics, 3V Devices
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Symbol
I
OL
V
I
I
I
I
I
V
V
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
512Mb and 1Gb Dual Die devices
512Mb and 1Gb Dual Die devices
128Mb, 256Mb, 512Mb devices
128Mb, 256Mb, 512Mb devices
V
DD
Stand-By Current (CMOS)
Stand-By Current (CMOS)
Output High Voltage Level
Output Low Voltage Level
Operating
Output Low Current (RB)
Output Leakage Current
Stand-by Current (TTL),
Stand-by Current (TTL)
Current
Input Leakage Current
Supply Voltage (Erase and
Input High Voltage
Input Low Voltage
Program lockout)
Parameter
Sequential
Program
Erase
Read
E=V
V
E=V
V
OUT
Test Conditions
IN
t
RLRL
I
I
OH
E=V
= 0 to V
IH
WP=0/V
OL
V
IL,
= 0 to V
OL
, WP=0V/V
I
= 400µA
= 2.1mA
OUT
minimum
DD
= 0.4V
-
-
-
-
-
-0.2,
DD
= 0 mA
DD
DD
max
max
DD
Min
2.0
2.4
0.3
8
-
-
-
-
-
-
-
-
-
-
-
Typ
10
10
10
10
20
10
-
-
-
-
-
-
-
-
-
V
DD
Max
100
±10
±10
0.8
0.4
2.5
20
20
20
50
1
2
-
+0.3
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V