HYB18L128160BC-7.5 QIMONDA [Qimonda AG], HYB18L128160BC-7.5 Datasheet - Page 3

• Manufacturer Part Number: HYB18L128160BC-7.5
• Description: DRAMs for Mobile Applications 128-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

1
This chapter gives an overview of the DRAMs for Mobile Applications product family and describes its main
characteristics.
1.1
The DRAMs for Mobile Applications offers the following key features:
General Features
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Power Saving Features
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Table 1
Table 2
Data Sheet
Part Number Speed Code
Speed Grade
Access Time (t
Clock Cycle Time (t
Item
Banks
Rows
Columns
4 banks × 2 Mbit × 16 organization
Fully synchronous to positive clock edge
Four internal banks for concurrent operation
Programmable CAS latency: 2, 3
Programmable burst length: 1, 2, 4, 8 or full page
Programmable wrap sequence: sequential or interleaved
Programmable drive strength
Auto refresh and self refresh modes
4096 refresh cycles / 64 ms
Auto precharge
Commercial (0 °C to +70 °C) and extended (-25 °C to +85 °C) operating temperature range
54-ball P-VFBGA package (12.0 × 8.0 × 1.0 mm)
Low supply voltages: V
Optimized self refresh (I
Programmable Partial Array Self Refresh (PASR)
Temperature Compensated Self-Refresh (TCSR), controlled by on-chip temperature sensor
Power-Down and Deep Power Down modes
Overview
Features
Performance
Memory Addressing Scheme
AC.max
CK.min
)
)
DD
DD6
= 1.70V to 1.95V, V
) and standby currents (I
DDQ
= 1.70V to 1.95V
DD2
3
CL = 3
CL = 2
CL = 3
CL = 2
Addresses
BA0, BA1
A0 - A11
A0 - A8
/I
DD3
)
HY[B/E]18L128160B[C/F]-7.5
133
5.4
6.0
7.5
9.5
128-Mbit Mobile-RAM
- 7.5
05282004-NZNK-8T0D
OverviewFeatures
Rev. 1.71, 2007-01
MHz
ns
ns
ns
ns
Unit