HYB18L128160BC-7.5 QIMONDA [Qimonda AG], HYB18L128160BC-7.5 Datasheet - Page 45

• Manufacturer Part Number: HYB18L128160BC-7.5
• Description: DRAMs for Mobile Applications 128-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

3
3.1
Table 18
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
Table 19
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 with VDD, VDDQ applied and all other pins (except the pin under test)
Data Sheet
Parameter
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Operation Case Temperature
Storage Temperature
Power Dissipation
Short Circuit Output Current
Parameter
Input capacitance: CLK
Input capacitance: all other input pins
Input/Output capacitance: DQ
floating. DQ’s should be in high impedance state. This may be achieved by pulling CKE to low level.
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Electrical Characteristics
Operating Conditions
Absolute Maximum Ratings
Pin Capacitances
1)2)
Commercial
Extended
45
V
V
V
V
T
T
T
P
I
C
C
C
Symbol
Symbol
OUT
C
C
STG
DD
DDQ
IN
OUT
D
I1
I2
IO
Electrical CharacteristicsOperating Conditions
-0.3
-0.3
-0.3
-0.3
0
-25
-55
–
–
1.5
1.5
3.0
min.
min.
HY[B/E]18L128160B[C/F]-7.5
Values
Values
2.7
2.7
V
v
+70
+85
+150
0.7
50
3.0
3.0
5.0
DDQ
DDQ
128-Mbit Mobile-RAM
max.
max.
+ 0.3
+ 0.3
05282004-NZNK-8T0D
Rev. 1.71, 2007-01
V
V
V
V
°C
°C
°C
W
mA
pF
pF
pF
Unit
Unit