HYB18L128160BC-7.5 QIMONDA [Qimonda AG], HYB18L128160BC-7.5 Datasheet - Page 49

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HYB18L128160BC-7.5

Manufacturer Part Number
HYB18L128160BC-7.5
Description
DRAMs for Mobile Applications 128-Mbit Mobile-RAM
Manufacturer
QIMONDA [Qimonda AG]
Datasheet

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Table 23
1) 0 °C ≤ T
2) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual
3.4
Table 24
The above characteristics are specified under nominal process variation / condition
Temperature (T
Data Sheet
Parameter & Test Conditions
Self Refresh Current:
Self refresh mode,
full array activation
(PASR = 000)
Self Refresh Current:
Self refresh mode,
half array activation
(PASR = 001)
Self Refresh Current:
Self refresh mode,
quarter array activation
(PASR = 010)
Voltage
(V)
0.00
0.40
0.65
0.85
1.00
1.40
1.50
1.65
1.80
1.95
temperature with a much finer resolution than supported by the 4 distinct temperature levels as defined by JEDEC for
TCSR. At production test the sensor is calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained
from device characterization.
0.0
15.1
20.3
22.0
22.6
23.5
23.6
23.8
23.9
24.0
C
Nominal
≤ 70 °C (comm.); -25 °C ≤ T
Pull-Down Current
Self Refresh Currents
Pull-up and Pull-down Characteristics
Half Drive Strength and Full Drive Strength
Low
j
): Nominal = 50 °C, V
(mA)
0.0
20.5
28.5
32.0
33.5
35.0
35.3
35.5
35.7
35.9
Nominal
Half Drive Strength
High
-19.7
-1.8
1)2)
-18.8
-18.2
-17.6
-16.7
-9.4
-6.6
3.8
9.8
Pull-Up Current (mA)
Nominal
DDQ
C
≤ 85 °C (ext.); V
Low
: Nominal = 1.80 V
Electrical CharacteristicsPull-up and Pull-down Characteristics
-33.4
-32.0
-31.0
-29.9
-28.7
-20.4
-17.1
-11.4
-4.8
2.5
Nominal
High
85 °C
85 °C
85 °C
Temperature
DD
70 °C
45 °C
25 °C
70 °C
45 °C
25 °C
70 °C
45 °C
25 °C
49
= V
Max.
DDQ
Full Drive Strength
0.0
30.2
40.5
43.9
45.2
46.9
47.2
47.5
48.0
47.7
Nominal
= 1.70V to 1.95V
Pull-Down Current
Low
Symbol
I
DD6
(mA)
0.0
41.0
57.0
64.0
67.0
70.0
70.5
71.0
71.4
71.8
HY[B/E]18L128160B[C/F]-7.5
Nominal
High
400
285
200
180
340
250
185
170
310
240
175
165
typ.
128-Mbit Mobile-RAM
-39.3
-37.6
-36.4
-35.1
-33.3
-18.8
-13.2
19.6
-3.5
7.5
Pull-Up Current (mA)
Values
Nominal
05282004-NZNK-8T0D
Low
470
400
360
Rev. 1.71, 2007-01
max.
-66.7
-63.9
-61.9
-59.8
-57.3
-40.7
-34.1
-22.7
-9.6
5.0
Nominal
High
Unit
µA

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