HYB18L128160BC-7.5 QIMONDA [Qimonda AG], HYB18L128160BC-7.5 Datasheet - Page 44

• Manufacturer Part Number: HYB18L128160BC-7.5
• Description: DRAMs for Mobile Applications 128-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

7) READs or WRITEs listed in the Command/Action column include READs or WRITEs with Auto Precharge enabled and
8) Requires appropriate DQM masking.
9) Concurrent Auto Precharge: bank n will start precharging when its burst has been interrupted by a READ or WRITE
Table 17
1) CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.
2) Current state is the state immediately prior to clock edge n.
3) COMMAND n is the command registered at clock edge n; ACTION n is a result of COMMAND n.
4) All states and sequences not shown are illegal or reserved.
5) DESELECT or NOP commands should be issued on any clock edges occurring during t
6) Exit from DEEP POWER DOWN requires the same command sequence as for power-up initialization.
Data Sheet
CKEn-1 CKEn
L
L
H
H
READs or WRITEs with Auto Precharge disabled.
command to bank m.
L
H
L
H
Truth Table - CKE
Current State
Power Down
Self Refresh
Clock Suspend
Deep Power Down
Power Down
Self Refresh
Clock Suspend
Deep Power Down
All Banks Idle
Bank(s) Active
All Banks Idle
Read / Write burst
see
Table 15
and
Table 16
X
X
X
Command
X
X
X
DESELECT or NOP
DESELECT or NOP
DESELECT or NOP
DESELECT or NOP
AUTO REFRESH
(valid)
44
Functional DescriptionFunction Truth Tables
Action
Maintain Power Down
Maintain Self Refresh
Maintain Clock Suspend
Maintain Deep Power
Down
Exit Power Down
Exit Self Refresh
Exit Clock Suspend
Exit Deep Power Down
Enter Precharge Power
Down
Enter Active Power Down
Enter Self Refresh
Enter Clock Suspend
HY[B/E]18L128160B[C/F]-7.5
RC
128-Mbit Mobile-RAM
period.
05282004-NZNK-8T0D
Rev. 1.71, 2007-01
Notes
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