PC2700 INFINEON [Infineon Technologies AG], PC2700 Datasheet - Page 24

• Manufacturer Part Number: PC2700
• Description: 184 - Pin Registered Double Data Rate SDRAM Modules
• Manufacturer: INFINEON [Infineon Technologies AG]

Table 12
Parameter
Address and control input
setup time
Address and control input hold
time
Read preamble
Read postamble
Active to Precharge command
Active to Active/Auto-refresh
command period
Auto-refresh to Active/Auto-
refresh command period
Active to Read or Write delay
Precharge command period
Active to Autoprecharge delay
Active bank A to Active bank B
command
Write recovery time
Auto precharge write recovery
+ precharge time
Internal write to read
command delay
Exit self-refresh to non-read
command
Exit self-refresh to read
command
Average Periodic Refresh
Interval
1) 0 C
2) Input slew rate
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference
4) Inputs are not recognized as valid until
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is
6) These parameters guarantee device timing, but they are not necessarily tested on each device.
7)
Data Sheet
(DDR400)
level for signals other than CK/CK, is
t
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
HZ
and
T
t
LZ
A
AC Timing - Absolute Specifications –5/–6/–7 (cont’d)
transitions occur in the same access time windows as valid data transitions. These parameters are not referred
70 C
1 V/ns for DDR400, DDR333
; V
DDQ
= 2.5 V
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
IS
IH
RPRE
RPST
RAS
RC
RFC
RCD
RP
RAP
RRD
WR
DAL
WTR
XSNR
XSRD
REFI
0.2 V,
V
REF
V
REF
Min.
0.6
0.7
0.6
0.7
0.9
0.4
40
55
65
15
15
t
t
10
15
—
2
75
200
—
. CK/CK slew rate are
RCD
RASmin
V
DD
stabilizes.
DDR400B
or
= +2.5 V
–5
Max.
—
—
1.1
0.6
70E+3 42
—
—
—
—
—
—
—
7.8
Registered Double Data Rate SDRAM Modules
24
0.2 V (DDR333);
Min.
0.75
0.8
0.75
0.8
0.9
0.4
60
72
18
18
t
t
12
15
—
1
75
200
—
RCD
RASmin
DDR333
or
1.0 V/ns.
–6
Max.
—
—
—
—
1.1
0.6
70E+3 45
—
—
—
—
—
—
—
—
—
7.8
HYS72D[32/64/128]3[00/20]GBR
V
DDQ
Min.
0.9
1.0
0.9
1.0
0.90
0.4
65
75
20
20
t
t
15
15
—
1
75
200
—
RCD
RASmin
DDR266A
= 2.6 V
or
–7
—
Max.
—
—
—
1.1
0.6
70E+3 ns
—
—
—
—
—
—
—
—
—
—
7.8
Electrical Characteristics
0.1 V,
10102003-01E2-HPA8
Unit Note/ Test
ns
ns
ns
ns
t
t
ns
ns
ns
ns
ns
ns
ns
t
t
ns
t
CK
CK
CK
CK
CK
s
V
DD
Rev. 1.1, 2004-04
Condition
fast slew rate
3)4)5)6)10)
slow slew rate
3)4)5)6)10)
fast slew rate
3)4)5)6)10)
slow slew rate
3)4)5)6)10)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)11)
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)12)
= +2.6 V
0.1 V
1)
V
TT
.