BSP170PL6327HTSA1 Infineon, BSP170PL6327HTSA1 Datasheet - Page 2

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BSP170PL6327HTSA1

Manufacturer Part Number
BSP170PL6327HTSA1
Description
Mosfet p-Ch 60v 1.9a Sot-223
Manufacturer
Infineon
Datasheet
Rev 2.52
1)
is vertical without blown air.
Parameter
Thermal characteristics
Thermal resistance,
junction -soldering point
SMD version, device on PCB:
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJS
thJA
DS(on)
minimal footprint
6 cm
V
V
V
T
V
T
V
V
|V
I
D
2
page 2
j
j
GS
DS
DS
DS
GS
GS
=25 °C
=125 °C
=-1.9 A
DS
(one layer, 70µm thick) copper area for drain connection. PCB
=V
=-60 V, V
=-60 V, V
=0 V, I
=-20 V, V
=-10 V, I
|>2|I
2
cooling area
GS
, I
D
|R
D
D
=-250 µA
=-250 µA
D
DS(on)max
GS
GS
DS
=-1.9 A
=0 V,
=0 V,
=0 V
1)
,
min.
-2.1
-60
1.3
-
-
-
-
-
-
-
Values
typ.
-0.1
239
-10
-10
2.6
-3
-
-
-
-
max.
-100
-100
110
300
20
70
-4
-1
BSP 170 P
-
-
Unit
K/W
K/W
V
µA
nA
mΩ
S
2009-02-16

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