BSP170PL6327HTSA1 Infineon, BSP170PL6327HTSA1 Datasheet - Page 6

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BSP170PL6327HTSA1

Manufacturer Part Number
BSP170PL6327HTSA1
Description
Mosfet p-Ch 60v 1.9a Sot-223
Manufacturer
Infineon
Datasheet
Rev 2.52
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
600
550
500
450
400
350
300
250
200
150
100
10
10
10
50
DS
=f(T
0
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=-1.9 A; V
5
20
98 %
10
GS
-V
T
=-10 V
j
DS
Ciss
[°C]
Coss
Crss
60
typ.
[V]
15
100
20
140
page 6
25
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
10
=f(T
SD
5
4
3
2
1
0
-1
-2
1
0
-60
)
0
150 °C, 98%
j
); V
j
GS
0.5
-20
=V
25 °C, typ
DS
25 °C, 98%
; I
1
20
D
=-250 µA
-V
min.
T
j
SD
1.5
typ.
[°C]
60
[V]
max.
2
100
150 °C, typ
BSP 170 P
2.5
140
2009-02-16
3

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