W25X40BVZPIG Winbond Electronics, W25X40BVZPIG Datasheet - Page 29

• Manufacturer Part Number: W25X40BVZPIG
• Description: IC SPI FLASH 4MBIT 8WSON
• Manufacturer: Winbond Electronics

Specifications of W25X40BVZPIG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 4M (512K x 8)
• Speed: 104MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-WSON
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

W25X10BV/20BV/40BV
9.2.17
Chip Erase (C7h or 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A
Write Enable instruction must be executed before the device will accept the Chip Erase Instruction
(Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and
shifting the instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in figure
17.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip
Erase instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction
will commence for a time duration of t
(See AC Characteristics). While the Chip Erase cycle is in
CE
progress, the Read Status Register instruction may still be accessed to check the status of the BUSY
bit. The BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is
ready to accept other instructions again. After the Chip Erase cycle has finished the Write Enable
Latch (WEL) bit in the Status Register is cleared to 0. The Chip Erase instruction will not be executed
if any page is protected by the Block Protect (BP2, BP1, and BP0) bits (see Status Register Memory
Protection table).
Figure 17. Chip Erase Instruction Sequence Diagram
Publication Release Date: August 20, 2009
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Preliminary -- Revision B