FGH50T65UPD Fairchild Semiconductor, FGH50T65UPD Datasheet - Page 3
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FGH50T65UPD
Manufacturer Part Number
FGH50T65UPD
Description
IGBT Transistors 650 V 100 A 240 W
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGH50T65UPD.pdf
(10 pages)
Specifications of FGH50T65UPD
Rohs
yes
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current At 25 C
100 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
240 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
©2012 Fairchild Semiconductor Corporation
FGH50T65UPD Rev. C0
Electrical Characteristics of the IGBT
Electrical Characteristics of the Diode
Q
Q
Q
V
E
t
Q
Symbol
Symbol
rr
FM
rec
g
ge
gc
rr
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Diode Forward Voltage
Reverse Recovery Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
Parameter
V
V
I
I
F
F
CE
GE
= 30A
= 30A, dI
= 400V, I
= 15V
Test Conditions
Test Conditions
F
/dt = 200A/μs
(Continued)
C
T
= 50A,
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
T
C
C
C
C
C
C
C
= 25
= 175
= 175
= 25
= 175
= 25
= 175
o
o
o
C
C
C
o
o
o
o
C
C
C
C
Min.
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
1.78
144
486
230
130
2.1
46
41
76
31
Max
Max
106
345
195
2.7
53
47
-
-
-
-
www.fairchildsemi.com
Unit
Unit
nC
nC
nC
nC
uJ
ns
V