FGH50T65UPD Fairchild Semiconductor, FGH50T65UPD Datasheet - Page 8

• Manufacturer Part Number: FGH50T65UPD
• Description: IGBT Transistors 650 V 100 A 240 W
• Manufacturer: Fairchild Semiconductor

Specifications of FGH50T65UPD

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current At 25 C: 100 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 240 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

©2012 Fairchild Semiconductor Corporation
FGH50T65UPD Rev. C0
Typical Performance Characteristics
1E-3
0.01
0.01
0.1
0.1
10
1
1E-5
1
1E-5
single pulse
0.01
0.02
0.5
0.2
0.1
0.05
0.5
0.2
0.05
0.02
0.01
0.1
Figure 25. Transient Thermal Impedance of IGBT
single pulse
Figure 26.Transient Thermal Impedance of Diode
1E-4
1E-4
Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
1E-3
1E-3
8
0.01
0.01
Duty Factor, D = t1/t2
Peak T
Duty Factor, D = t1/t2
Peak T
P
P
DM
DM
j
j
= Pdm x Zthjc + T
0.1
= Pdm x Zthjc + T
0.1
t
t
1
1
t
t
2
2
C
C
1
1
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