FGD3040G2_F085 Fairchild Semiconductor, FGD3040G2_F085 Datasheet
FGD3040G2_F085
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FGD3040G2_F085 Summary of contents
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... N-Channel Ignition IGBT Features o SCIS Energy = 300mJ Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Package GATE EMITTER COLLECTOR JEDEC TO-252 D-Pak @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev.C1 Applications C Automotive lgnition Coil Driver Circuits Coil On Plug Applications 1 April 2012 www.fairchildsemi.com ...
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... On State Characteristics V Collector to Emitter Saturation Voltage I CE(SAT) V Collector to Emitter Saturation Voltage I CE(SAT) V Collector to Emitter Saturation Voltage I CE(SAT) E Self Clamped Inductive Switching SCIS @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev. 25°C unless otherwise noted A Parameter = 1mA 10mA 5.0V 25° 5.0V 110°C ...
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... Thermal Resistance Junction to Case θJC Notes: 1: Self Clamping Inductive Switching Energy (E o Tj=25 C; L=3mHy, I =14.2A,V SCIS 2: Self Clamping Inductive Switching Energy (E o Tj=150 C; L=3mHy, I =10.8A,V SCIS @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev. 25°C unless otherwise noted A Test Conditions I = 10A 12V 1mA ...
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... COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 5. Collector to Emitter On-State Voltage vs. Collector Current @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev. 5V 100V 100 1000 0 μ Figure 2. 1. ...
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... T , CASE TEMPERATURE( C Figure 9. DC Collector Current vs. Case Temperature 2.0 1.8 1.6 1.4 1.2 1.0 -50 - JUNCTION TEMPERATURE J Figure 11. Threshold Voltage vs. Junction Temperature @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev.C1 (Continued) 30 PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX 175 1.0 Figure 5. 10A, T ...
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... Figure 15. Break down Voltage vs. Series Gate Resistance 2 DUTY CYCLE - DESCENDING ORDER 0.5 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE 0. Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev.C1 (Continued) 2000 Resistive t OFF 1600 1200 Inductive t OFF 800 400 Resistive 125 150 175 Figure 14 ...
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... Single Non Repetitive Pulse operation *For Single Non Repetitive Tj=175°C Tc=25°C Vge=5.0V Rev. 2.1 0.1 1 @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev.C1 Pulse Operation * Pul COLLECTOR to EMITTER VOLTAGE (V) CE Figure 17. Forward Safe Operating Area 7 *Operation in this area is permitted during SCIS ...
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... G G PULSE DUT GEN E Figure 18. Inductive Switching Test Circuit VARY t TO OBTAIN P REQUIRED PEAK SCIS Figure 20. Energy Test Circuit @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev. Figure 19 DUT - SCIS 0.01 Figure 21. Energy Waveforms ...
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... Mechanical Dimensions 6.60 5.34 (0.50) (4.34) MAX0.96 2.30TYP [2.30±0.20] @2012 Fairchild Semiconductor Corporation FGD3040G2_F085 Rev.C1 D-PAK ±0.20 ±0.30 (0.50) 0.76 ±0.10 2.30TYP [2.30±0.20] 9 2.30 ±0.10 0.50 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30 ±0.20 6.60 ±0.20 (5.34) (5.04) (1.50) (2XR0.25) 0.76 ±0.10 Dimensions in Millimeters www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. ® 2Cool™ FlashWriter AccuPower™ FPS™ Auto-SPM™ F-PFS™ ® AX-CAP™* FRFET ® ...