FGD3040G2_F085 Fairchild Semiconductor, FGD3040G2_F085 Datasheet - Page 3

• Manufacturer Part Number: FGD3040G2_F085
• Description: IGBT Transistors EcoSPARK2 300mJ 400V N-Chan Ignition IGBT
• Manufacturer: Fairchild Semiconductor

Specifications of FGD3040G2_F085

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 400 V
• Collector-emitter Saturation Voltage: 1.15 V
• Maximum Gate Emitter Voltage: 10 V
• Continuous Collector Current At 25 C: 23.2 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 125 C
• Package / Case: TO-252
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 2500

@2012 Fairchild Semiconductor Corporation
FGD3040G2_F085 Rev.C1
Electrical Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Notes:
Tj=25
Tj=150
Q
V
V
t
t
t
t
R
Symbol
d(ON)R
rR
d(OFF)L
fL
GE(TH)
GEP
θJC
2: Self Clamping Inductive Switching Energy (E
G(ON)
1: Self Clamping Inductive Switching Energy (E
o
C; L=3mHy, I
o
C; L=3mHy, I
Thermal Resistance Junction to Case
Gate Charge
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
Current Turn-On Delay Time-Resistive V
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive V
Current Fall Time-Inductive
SCIS
SCIS
Parameter
=14.2A,V
=10.8A,V
CC
CC
=100V during inductor charging and V
T
=100V during inductor charging and V
A
= 25°C unless otherwise noted
I
V
I
V
V
T
V
I
CE
CE
CE
GE
CE
CE
GE
J
CE
GE
= 25
= 10A, V
= 1mA, V
= 6.5A, T
SCIS150
SCIS25
= 12V, I
= 14V, R
= 300V, L = 1mH,
= 5V
= 5V, R
= 5V, R
o
C,
3
) of 300 mJ is based on the test conditions that starting
) of 170 mJ is based on the test conditions that starting
CE
CE
G
G
CE
J
L
Test Conditions
= 25
= 1Ω
= 1KΩ
= 1KΩ
= 10A
= 12V,
= V
o
GE,
C,
T
T
J
J
= 25
= 150
CC
CC
o
=0V during the time in clamp
C
o
=0V during the time in clamp
C
0.75
1.3
Min
-
-
-
-
-
-
-
Typ
1.7
1.2
2.8
0.9
1.9
4.8
2.0
21
-
www.fairchildsemi.com
Max Units
2.2
1.8
15
15
1
4
7
-
-
o
C/W
nC
μs
μs
μs
μs
V
V
.
.