IKW50N65H5FKSA1 Infineon Technologies, IKW50N65H5FKSA1 Datasheet - Page 13
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IKW50N65H5FKSA1
Manufacturer Part Number
IKW50N65H5FKSA1
Description
IGBT Transistors IGBT PRODUCTS
Manufacturer
Infineon Technologies
Datasheet
1.IKW50N65H5FKSA1.pdf
(17 pages)
Specifications of IKW50N65H5FKSA1
Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
80 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
305 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247-3
Continuous Collector Current Ic Max
56 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Part # Aliases
IKW50N65H5 SP001001734
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IKW50N65H5FKSA1
Manufacturer:
INFINEON
Quantity:
3 000
Figure 21. Typicalreverserecoverychargeasa
Figure 23. Typicaldiodepeakrateoffallofreverse
-100
-150
-200
-250
-300
-350
-400
-450
-500
-50
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0
500
500
di
di
functionofdiodecurrentslope
(V
recoverycurrentasafunctionofdiode
currentslope
(V
F
F
T
T
T
T
R
R
/dt,DIODECURRENTSLOPE[A/µs]
/dt,DIODECURRENTSLOPE[A/µs]
=400V)
=400V)
j
j
j
j
=25°C, I
=150°C, I
700
=25°C, I
=150°C, I
700
F
F
F
F
= 25A
= 25A
900
900
= 25A
= 25A
1100
1100
1300
1300
Highspeedswitchingseriesfifthgeneration
1500
1500
13
Figure 22. Typicalreverserecoverycurrentasa
Figure 24. Typicaldiodeforwardcurrentasafunction
25
23
21
19
17
15
13
11
81
72
63
54
45
36
27
18
9
7
5
9
0
500
0.0
di
functionofdiodecurrentslope
(V
offorwardvoltage
F
T
T
T
T
R
/dt,DIODECURRENTSLOPE[A/µs]
=400V)
j
j
j
j
=25°C, I
=150°C, I
700
=25°C
=150°C
0.5
V
F
,FORWARDVOLTAGE[V]
F
F
= 25A
900
= 25A
1.0
1100
IKW50N65H5
1.5
Rev.1.1,2012-11-09
1300
2.0
1500
2.5