IKW50N65H5FKSA1 Infineon Technologies, IKW50N65H5FKSA1 Datasheet - Page 6

• Manufacturer Part Number: IKW50N65H5FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKW50N65H5FKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 305 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 56 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKW50N65H5 SP001001734

DiodeCharacteristic,atT
SwitchingCharacteristic,InductiveLoad,atT
IGBTCharacteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current I
Diode peak rate of fall of reverse
recoverycurrentduringt
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current I
Diode peak rate of fall of reverse
recoverycurrentduringt
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
b
b
vj
=25°C
t
t
t
t
E
E
E
t
Q
di
t
Q
di
Symbol Conditions
t
t
t
t
E
E
E
t
t
t
t
E
E
E
d(on)
r
d(off)
f
rr
rrm
rr
rrm
d(on)
r
d(off)
f
d(on)
r
d(off)
f
on
off
ts
on
off
ts
on
off
ts
rr
rr
rr
rr
/dt
/dt
Highspeedswitchingseriesfifthgeneration
T
V
V
r
C =30pF
L ,C fromFig.E
Energy losses include “tail” and
diode reverse recovery.
T
V
I
di
T
V
I
di
T
V
V
r
C =30pF
L ,C fromFig.E
Energy losses include “tail” and
diode reverse recovery.
T
V
V
r
C =30pF
L ,C fromFig.E
Energy losses include “tail” and
diode reverse recovery.
F
F
G
G
G
vj
vj
vj
vj
vj
CC
GE
R
=25.0A,
R
=6.0A,
CC
GE
CC
GE
F
F
=12.0 ,L =30nH,
vj
=12.0 ,L =30nH,
=12.0 ,L =30nH,
=25°C,
=25°C,
=25°C,
=150°C,
=150°C,
=400V,
/dt=1200A/µs
=400V,
/dt=1200A/µs
=150°C
=400V,I
=0.0/15.0V,
=400V,I
=0.0/15.0V,
=400V,I
=0.0/15.0V,
6
C
C
C
=6.0A,
=25.0A,
=6.0A,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKW50N65H5
Value
-1150
-415
0.11
0.05
0.16
0.57
16.7
0.27
13.0
0.75
0.27
1.02
0.20
0.08
0.28
typ.
200
205
250
Rev.1.1,2012-11-09
20
25
57
32
20
15
26
18
35
4
5
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
A/µs
A/µs
Unit
mJ
mJ
mJ
µC
µC
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
A