IKP08N65F5XKSA1 Infineon Technologies, IKP08N65F5XKSA1 Datasheet - Page 10

• Manufacturer Part Number: IKP08N65F5XKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKP08N65F5XKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 18 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 11 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKP08N65F5 SP000973408

Figure 9. Typicalswitchingtimesasafunctionofgate
Figure 11. Gate-emitterthresholdvoltageasafunction
100
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10
1
5
0
resistor
(inductiveload,T
V
Figure E)
ofjunctiontemperature
(I
GE
15
T
C
25
t
t
t
t
=15/0V,I
vj
=0.08mA)
d(off)
f
d(on)
r
,JUNCTIONTEMPERATURE[°C]
25
r
G
50
,GATERESISTOR[ ]
typ.
min.
max.
C
=4A,Dynamictestcircuitin
35
75
vj
=150°C,V
45
100
55
CE
125
=400V,
65
Highspeedswitchingseriesfifthgeneration
150
75
175
85
10
Figure 10. Typicalswitchingtimesasafunctionof
Figure 12. Typicalswitchingenergylossesasa
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
1
25
0
junctiontemperature
(inductiveload,V
I
E)
functionofcollectorcurrent
(inductiveload,T
V
Figure E)
C
T
3
GE
=4A,r
t
t
t
t
E
E
E
vj
d(off)
f
d(on)
r
50
,JUNCTIONTEMPERATURE[°C]
off
on
ts
=15/0V,r
I
C
,COLLECTORCURRENT[A]
6
G
=48 ,DynamictestcircuitinFigure
75
G
9
=48 ,Dynamictestcircuitin
CE
vj
100
=150°C,V
12
=400V,V
15
IKP08N65F5
125
Rev.1.1,2012-11-09
GE
CE
18
=400V,
=15/0V,
150
21
175
24