IKP08N65F5XKSA1 Infineon Technologies, IKP08N65F5XKSA1 Datasheet - Page 8

• Manufacturer Part Number: IKP08N65F5XKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKP08N65F5XKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 18 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 11 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKP08N65F5 SP000973408

Figure 1. Forwardbiassafeoperatingarea
Figure 3. Collectorcurrentasafunctionofcase
0.1
10
18
16
14
12
10
1
8
6
4
2
0
25
1
V
(D=0,T
RecommendeduseatV
temperature
(V
CE
t
100µs
200µs
500µs
p
,COLLECTOR-EMITTERVOLTAGE[V]
GE
=1µs
10µs
50µs
50
DC
T
15V,T
C
,CASETEMPERATURE[°C]
C
=25°C,T
10
75
vj
175°C)
vj
100
175°C;V
GE
100
125
7.5V)
GE
=15V.
Highspeedswitchingseriesfifthgeneration
150
1000
175
8
Figure 2. Powerdissipationasafunctionofcase
Figure 4. Typicaloutputcharacteristic
80
70
60
50
40
30
20
10
24
21
18
15
12
0
9
6
3
0
0.0
25
V
V
GE
temperature
(T
(T
CE
=20V
0.5
vj
vj
18V
12V
10V
,COLLECTOR-EMITTERVOLTAGE[V]
=25°C)
8V
7V
6V
5V
50
175°C)
T
C
,CASETEMPERATURE[°C]
1.0
75
1.5
100
2.0
2.5
IKP08N65F5
125
Rev.1.1,2012-11-09
3.0
150
3.5
175
4.0