FDMS86200DC Fairchild Semiconductor, FDMS86200DC Datasheet - Page 4

• Manufacturer Part Number: FDMS86200DC
• Description: MOSFET 150V/20V N Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86200DC

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 17 mOhms, 25 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56-8
• Fall Time: 5 ns
• Forward Transconductance Gfs (max / Min): 32 S
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 125 W
• Rise Time: 4 ns
• Typical Turn-off Delay Time: 23 ns

©2012 Fairchild Semiconductor Corporation
FDMS86200DC Rev. C1
Typical Characteristics
100
75
50
25
2.5
2.0
1.5
1.0
0.5
100
Figure 3. Normalized On- Resistance
0
75
50
25
Figure 1.
0
-75
0
Figure 5. Transfer Characteristics
2
V
I
V
D
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
= 9.3 A
DS
-50
= 10 V
vs Junction Temperature
= 10 V
= 5 V
V
T
1
V
DS
-25
On-Region Characteristics
J
GS
,
,
JUNCTION TEMPERATURE
DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
V
0
4
GS
T
2
J
= 7 V
V
25
= 150
GS
μ
= 6 V
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
50
T
C
J
3
= 25 °C unless otherwise noted
V
T
GS
75
J
6
= -55
= 5.5 V
T
(
100 125 150
J
o
C
= 25
o
4
C
)
V
GS
o
C
= 5 V
μ
s
5
8
4
0.001
0.01
100
60
50
40
30
20
10
0.1
5
4
3
2
1
0
10
0
Figure 2.
Figure 4.
0
1
Forward Voltage vs Source Current
0.0
vs Drain Current and Gate Voltage
4
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
GS
V
= 0 V
T
SD
0.2
5
= 5 V
J
V
Normalized On-Resistance
, BODY DIODE FORWARD VOLTAGE (V)
= 150
GS
On-Resistance vs Gate to
25
Source Voltage
,
Source to Drain Diode
I
D
GATE TO SOURCE VOLTAGE (V)
,
o
DRAIN CURRENT (A)
V
C
0.4
6
GS
T
T
= 5.5 V
J
J
= 25
μ
= 125
V
s
50
GS
0.6
7
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
= 6 V
C
o
C
0.8
8
T
J
I
D
= -55
75
T
= 9.3 A
J
= 25
www.fairchildsemi.com
V
V
GS
GS
o
1.0
9
C
= 10 V
o
= 7 V
C
μ
100
s
10
1.2