FDMS86200DC Fairchild Semiconductor, FDMS86200DC Datasheet - Page 4
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FDMS86200DC
Manufacturer Part Number
FDMS86200DC
Description
MOSFET 150V/20V N Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMS86200DC.pdf
(8 pages)
Specifications of FDMS86200DC
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
28 A
Resistance Drain-source Rds (on)
17 mOhms, 25 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56-8
Fall Time
5 ns
Forward Transconductance Gfs (max / Min)
32 S
Gate Charge Qg
30 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Rise Time
4 ns
Typical Turn-off Delay Time
23 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
©2012 Fairchild Semiconductor Corporation
FDMS86200DC Rev. C1
Typical Characteristics
100
75
50
25
2.5
2.0
1.5
1.0
0.5
100
Figure 3. Normalized On- Resistance
0
75
50
25
Figure 1.
0
-75
0
Figure 5. Transfer Characteristics
2
V
I
V
D
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
= 9.3 A
DS
-50
= 10 V
vs Junction Temperature
= 10 V
= 5 V
V
T
1
V
DS
-25
On-Region Characteristics
J
GS
,
,
JUNCTION TEMPERATURE
DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
V
0
4
GS
T
2
J
= 7 V
V
25
= 150
GS
μ
= 6 V
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
50
T
C
J
3
= 25 °C unless otherwise noted
V
T
GS
75
J
6
= -55
= 5.5 V
T
(
100 125 150
J
o
C
= 25
o
4
C
)
V
GS
o
C
= 5 V
μ
s
5
8
4
0.001
0.01
100
60
50
40
30
20
10
0.1
5
4
3
2
1
0
10
0
Figure 2.
Figure 4.
0
1
Forward Voltage vs Source Current
0.0
vs Drain Current and Gate Voltage
4
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
GS
V
= 0 V
T
SD
0.2
5
= 5 V
J
V
Normalized On-Resistance
, BODY DIODE FORWARD VOLTAGE (V)
= 150
GS
On-Resistance vs Gate to
25
Source Voltage
,
Source to Drain Diode
I
D
GATE TO SOURCE VOLTAGE (V)
,
o
DRAIN CURRENT (A)
V
C
0.4
6
GS
T
T
= 5.5 V
J
J
= 25
μ
= 125
V
s
50
GS
0.6
7
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
= 6 V
C
o
C
0.8
8
T
J
I
D
= -55
75
T
= 9.3 A
J
= 25
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V
V
GS
GS
o
1.0
9
C
= 10 V
o
= 7 V
C
μ
100
s
10
1.2