FDMS86200DC Fairchild Semiconductor, FDMS86200DC Datasheet - Page 5

• Manufacturer Part Number: FDMS86200DC
• Description: MOSFET 150V/20V N Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86200DC

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 17 mOhms, 25 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56-8
• Fall Time: 5 ns
• Forward Transconductance Gfs (max / Min): 32 S
• Gate Charge Qg: 30 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 125 W
• Rise Time: 4 ns
• Typical Turn-off Delay Time: 23 ns

©2012 Fairchild Semiconductor Corporation
FDMS86200DC Rev. C1
Typical Characteristics
0.001
0.01
200
100
0.1
Figure 7.
50
10
10
10
0.001
1
1
8
6
4
2
0
0.01
0
Figure 9.
I
D
Figure 11.
SINGLE PULSE
T
R
T
THIS AREA IS
LIMITED BY r
= 9.3 A
J
A
θ
JA
= MAX RATED
= 25
= 81
Switching Capability
0.01
V
0.1
Gate Charge Characteristics
DS
o
7
C
t
Operating Area
o
, DRAIN to SOURCE VOLTAGE (V)
AV
Unclamped Inductive
C/W
, TIME IN AVALANCHE (ms)
Q
DS(on)
g
Forward Bias Safe
V
, GATE CHARGE (nC)
DD
0.1
T
14
J
= 75 V
1
= 125
CURVE BENT TO
MEASURED DATA
V
DD
T
J
= 50 V
o
= 25
T
C
J
21
1
10
= 25 °C unless otherwise noted
o
V
C
DD
T
= 100 V
J
= 100
10
28
100
o
C
100 ms
DC
1 ms
10 ms
1 s
10 s
100
800
35
5
10000
1000
1000
100
100
60
45
30
15
10
10
Figure 10.
0
1
1
0.1
10
25
Figure 12. Single Pulse Maximum
-3
f = 1 MHz
V
Limited by Package
Figure 8.
GS
Current vs Case Temperature
= 0 V
10
V
50
DS
-2
Maximum Continuous Drain
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
C
Capacitance vs Drain
,
CASE TEMPERATURE
10
t, PULSE WIDTH (sec)
1
-1
75
10
0
100
V
V
GS
10
GS
10
= 6 V
1
= 10 V
R
(
SINGLE PULSE
R
T
o
A
θ
θ
C
JC
JA
= 25
)
125
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= 1.0
= 81
100
o
C
o
o
C/W
C
C
C/W
C
oss
rss
iss
1000
150
100