FDD14AN06LA0_F085 Fairchild Semiconductor, FDD14AN06LA0_F085 Datasheet - Page 5

• Manufacturer Part Number: FDD14AN06LA0_F085
• Description: MOSFET 60V N-CHAN PwrTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDD14AN06LA0_F085

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 12.8 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-252AA
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 125 W
• Factory Pack Quantity: 2500

©2010 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
Figure 13. Capacitance vs Drain to Source
5000
1000
100
1.4
1.2
1.0
0.8
0.6
0.4
50
0.1
-80
C
V
RSS
GS
-40
= 0V, f = 1MHz
Junction Temperature
C
V
GD
DS
T
J
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
0
Voltage
1
40
80
V
T
GS
C
= V
C
C
= 25°C unless otherwise noted
120
ISS
OSS
10
DS
o
, I
C)
C
D
C
GS
= 250 A
DS
160
+ C
+ C
GD
GD
200
60
Figure 14. Gate Charge Waveforms for Constant
Breakdown Voltage vs Junction Temperature
10
8
6
4
2
0
1.2
1.1
1.0
0.9
Figure 12. Normalized Drain to Source
0
-80
V
DD
I
D
= 30V
= 250 A
-40
10
T
J
, JUNCTION TEMPERATURE (
Gate Currents
0
Q
g
, GATE CHARGE (nC)
20
40
WAVEFORMS IN
DESCENDING ORDER:
80
30
I
I
D
D
= 50A
= 10A
120
FDD14AN06LA0_F085 Rev. C
o
C)
40
160
200
50