FDD14AN06LA0_F085 Fairchild Semiconductor, FDD14AN06LA0_F085 Datasheet - Page 6
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FDD14AN06LA0_F085
Manufacturer Part Number
FDD14AN06LA0_F085
Description
MOSFET 60V N-CHAN PwrTrench
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDD14AN06LA0_F085.pdf
(11 pages)
Specifications of FDD14AN06LA0_F085
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
50 A
Resistance Drain-source Rds (on)
12.8 mOhms
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-252AA
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Factory Pack Quantity
2500
©2010 Fairchild Semiconductor Corporation
Test Circuits and Waveforms
VARY t
REQUIRED PEAK I
V
0V
GS
I
Figure 15. Unclamped Energy Test Circuit
g(REF)
Figure 19. Switching Time Test Circuit
P
Figure 17. Gate Charge Test Circuit
TO OBTAIN
V
t
GS
P
V
GS
AS
R
GS
R
V
G
GS
V
DS
V
DUT
DS
V
I
AS
DS
L
DUT
R
DUT
L
0.01
L
-
+
V
-
-
+
+
DD
V
V
DD
DD
0
I
0
0
V
V
V
g(REF)
0
0
V
DD
GS
DS
10%
GS
Figure 16. Unclamped Energy Waveforms
= 1V
Figure 20. Switching Time Waveforms
Figure 18. Gate Charge Waveforms
t
d(ON)
90%
Q
Q
gs
Q
50%
t
gs2
ON
g(TH)
10%
t
r
I
AS
PULSE WIDTH
Q
V
t
DS
gd
P
Q
g(TOT)
BV
t
AV
DSS
V
GS
t
d(OFF)
FDD14AN06LA0_F085 Rev. C
90%
V
t
DS
OFF
50%
t
V
f
10%
GS
V
= 5V
DD
90%