SFW9540TM Fairchild Semiconductor, SFW9540TM Datasheet
SFW9540TM
Manufacturer Part Number
SFW9540TM
Description
MOSFET P-CH/100V/17A/0.2OHM
Manufacturer
Fairchild Semiconductor
Datasheet
1.SFW9540TM.pdf
(6 pages)
Specifications of SFW9540TM
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
- 17 A
Resistance Drain-source Rds (on)
0.2 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263
Fall Time
26 ns
Forward Transconductance Gfs (max / Min)
9.5 S
Minimum Operating Temperature
- 55 C
Power Dissipation
3.8 W
Rise Time
22 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
45 ns
Advanced Power MOSFET
Thermal Resistance
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n 175
n Lower Leakage Current : 10 A (Max.) @ V
n Low R
Absolute Maximum Ratings
*
When mounted on the minimum pad size recommended (PCB Mount).
T
Symbol
Symbol
J
dv/dt
R
R
R
V
V
E
E
I
I
P
, T
I
T
DM
AR
DSS
D
GS
AS
AR
JC
JA
JA
D
L
o
STG
C Operating Temperature
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes,
: 0.161
Junction-to-Ambient
Junction-to-Ambient
(Typ.)
1/8”
Junction-to-Case
Characteristic
Characteristic
from case for 5-seconds
A
C
=25
=25
C
C
=25
=100
*
o
o
C)
C)
DS
o
C)
o
*
C)
= -100V
O
O
O
O
O
2
1
1
1
3
Typ.
--
--
--
- 55 to +175
-100
13.2
0.88
Value
578
-6.5
132
300
-17
-12
-68
-17
1
3.8
SFW/I9540
BV
R
I
30
3
1. Gate 2. Drain 3. Source
D
D
DS(on)
2
-PAK
= -17 A
DSS
Max.
1.14
62.5
40
= 0.2
= -100 V
2
1
2
3
I
2
-PAK
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
W
W
V
A
V
A
A
C
Rev. C
o
C
Related parts for SFW9540TM
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
SFW9540TM Summary of contents
Page 1
Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area o n 175 C Operating Temperature n Lower Leakage Current : 10 A (Max.) ...
Page 2
SFW/I9540 Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R ...
Page 3
P-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS Top : - 5.0 V Bottom : - ...
Page 4
SFW/I9540 Fig 7. Breakdown Voltage vs. Temperature ...
Page 5
P-CHANNEL POWER MOSFET “ Current Regulator ” 50K 12V 200nF 300nF V GS -3mA R 1 Current Sampling (I Resistor Fig 13. Resistive Switching Test Circuit & Waveforms V out -10V Fig 14. Unclamped Inductive Switching ...
Page 6
SFW/I9540 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) DUT ) DUT ) + V DS DUT -- I S Driver Compliment ...