SFW9540TM Fairchild Semiconductor, SFW9540TM Datasheet - Page 2

• Manufacturer Part Number: SFW9540TM
• Description: MOSFET P-CH/100V/17A/0.2OHM
• Manufacturer: Fairchild Semiconductor

Specifications of SFW9540TM

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: - 17 A
• Resistance Drain-source Rds (on): 0.2 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263
• Fall Time: 26 ns
• Forward Transconductance Gfs (max / Min): 9.5 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.8 W
• Rise Time: 22 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 45 ns

SFW/I9540
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes ;
O
O
O
O
O
4
5
1
2
R
3
BV
BV/ T
V
C
t
t
V
I
I
C
C
GS(th)
Q
Q
I
Q
DS(on)
d(on)
d(off)
Q
GSS
DSS
g
I
SM
t
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=3.0mH, I
I
Pulse Test : Pulse Width = 250 s, Duty Cycle
Essentially Independent of Operating Temperature
t
SD
t
S
rr
SD
oss
DSS
iss
rss
fs
gd
r
f
gs
rr
g
< _
J
-17A, di/dt 450A/ s, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller” ) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=-17A, V
< _
Characteristic
Characteristic
DD
=-25V, R
DD
< _
G
=27
BV
DSS
(T
*
C
, Starting T
, Starting T
=25
O
O
4
1
< _
o
C unless otherwise specified)
2%
Min.
Min.
-100
-2.0
J
J
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
=25
=25
-0.11
o
o
1180
Typ.
Typ.
17.8
C
C
240
135
7.4
0.7
9.5
83
14
22
45
26
43
--
--
--
--
--
--
--
--
--
--
1535
Max. Units
Max. Units
-100
-100
-4.0
-4.0
100
0.2
360
125
100
-17
-68
-10
40
55
60
54
--
--
--
--
--
--
--
V/
nA
nC
pF
ns
ns
V
V
A
V
S
o
A
C
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
=-250 A
G
=-17A
F
=25
=25
/dt=100A/ s
=12
=-5V,I
=-100V
=-80V,T
=-40V,I
=-80V,V
=0V,I
=-20V
=20V
=-10V,I
=0V,V
=-50V,I
See Fig 13
Test Condition
Test Condition
o
o
C,I
C,I
See Fig 5
POWER MOSFET
D
D
S
F
DS
=-250 A
=-17A
=-250 A
=-17A,V
D
D
D
P-CHANNEL
C
GS
=-25V,f =1MHz
=-8.5A
=-8.5A
=-17A,
=150
=-10V,
See Fig 7
o
C
GS
=0V
O
O
4
4
O
O
O
O
O
4
4
5
5
4