FDC6312P_Q Fairchild Semiconductor, FDC6312P_Q Datasheet - Page 4

• Manufacturer Part Number: FDC6312P_Q
• Description: MOSFET SSOT-6 P-CH DUAL
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6312P_Q

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 2.3 A
• Resistance Drain-source Rds (on): 0.115 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SSOT-6
• Fall Time: 13 ns
• Forward Transconductance Gfs (max / Min): 5.3 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.96 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 18 ns

Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
10
Figure 9. Maximum Safe Operating Area.
0
1
Figure 7. Gate Charge Characteristics.
0.1
0.001
I
D
0.01
R
= -2.3A
0.1
SINGLE PULSE
R
DS(ON)
0.0001
1
V
JA
T
GS
A
= 180
1
= 25
LIMIT
= -4.5V
o
D = 0.5
o
C/W
C
-V
0.2
0.1
DS
0.05
SINGLE PULSE
, DRAIN-SOURCE VOLTAGE (V)
0.02
2
Q
0.01
1
g
, GATE CHARGE (nC)
DC
0.001
10s
3
Figure 11. Transient Thermal Response Curve.
1s
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10
10ms
4
V
DS
0.01
= -5V
1ms
5
-15V
-10V
100
6
0.1
t
1
, TIME (sec)
700
600
500
400
300
200
100
5
4
3
2
1
0
0.01
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
0.1
-V
Power Dissipation.
5
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
C
ISS
OSS
RSS
1
t
1
10
, TIME (sec)
10
10
P(pk)
Duty Cycle, D = t
T
SINGLE PULSE
R
R
J
R
JA
T
JA
- T
100
A
JA
= 180°C/W
(t) = r(t) + R
15
= 25°C
A
t
100
= 180°C/W
1
= P * R
t
2
FDC6312P Rev C (W)
V
f = 1MHz
GS
= 0 V
JA
1
(t)
JA
/ t
1000
2
20
1000