FDC6312P_Q Fairchild Semiconductor, FDC6312P_Q Datasheet - Page 5

• Manufacturer Part Number: FDC6312P_Q
• Description: MOSFET SSOT-6 P-CH DUAL
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6312P_Q

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 2.3 A
• Resistance Drain-source Rds (on): 0.115 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SSOT-6
• Fall Time: 13 ns
• Forward Transconductance Gfs (max / Min): 5.3 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.96 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 18 ns

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