NDS8434_Q Fairchild Semiconductor, NDS8434_Q Datasheet - Page 3

• Manufacturer Part Number: NDS8434_Q
• Description: MOSFET Single P-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8434_Q

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 6.5 A
• Resistance Drain-source Rds (on): 0.035 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 63 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 38 ns
• Typical Turn-off Delay Time: 169 ns

Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
S
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Notes:
SD
design while R
P
Typical R
D
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
a. 50
b. 105
c. 125
Scale 1 : 1 on letter size paper
JA
R
T
1a
J
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
J A
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
o
T
CA
t
C/W when mounted on a 1 in
A
o
o
C/W when mounted on a 0.006 in
C/W when mounted on a 0.04 in
is determined by the user's board design.
R
J C
T
J
R
T
CA
A
t
I
2
D
t
2
pad of 2oz copper.
R
DS ON
(T
2
2
pad of 2oz copper.
pad of 2oz copper.
A
= 25°C unless otherwise noted)
T
J
1b
Conditions
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
1c
Min
Typ
-0.8
JC
Max
-2.1
-1.2
is guaranteed by
NDS8434 Rev. A3
Units
A
V