NDS8434_Q Fairchild Semiconductor, NDS8434_Q Datasheet - Page 5

• Manufacturer Part Number: NDS8434_Q
• Description: MOSFET Single P-Ch FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8434_Q

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 6.5 A
• Resistance Drain-source Rds (on): 0.035 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 63 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 38 ns
• Typical Turn-off Delay Time: 169 ns

Typical Electrical Characteristics
V
GS
5 5 0 0
4 0 0 0
2 0 0 0
1 0 0 0
8 0 0
5 0 0
3 0 0
2 0 0
1.08
1.06
1.04
1.02
0.98
0.96
0.94
Figure 9. Capacitance Characteristics.
0.1
1
-50
Figure 11. Switching Test Circuit.
I
D
= -250µA
R
Figure 7. Breakdown Voltage
-25
0.2
f = 1 MHz
V
Variation with Temperature.
GEN
GS
= 0 V
-V
T
DS
0
J
V
0.5
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
IN
G
2 5
1
5 0
-V
D
S
2
DD
7 5
R
L
1 0 0
D U T
5
(continued)
1 2 5
C iss
1 0
C oss
V
C rss
O U T
1 5 0
2 0
V
Figure 8. Body Diode Forward Voltage Variation
V
t
0.0001
OUT
0.001
d(on)
0.01
IN
5
4
3
2
1
0
0.1
25
10
0
Figure 10. Gate Charge Characteristics.
1
1 0 %
0
I
D
Figure 12. Switching Waveforms.
= -6.5A
V
GS
0.2
-V
= 0V
t
1 0
o n
5 0 %
SD
1 0 %
, BODY DIODE FORWARD VOLTAGE (V)
T = 125°C
J
0.4
t
9 0 %
PULSE W IDTH
Q
r
with Source Current and
g
2 0
, GATE CHARGE (nC)
0.6
Temperature.
25°C
t
d(off)
V
DS
0.8
3 0
-55°C
= -5.0V
5 0 %
9 0 %
1
t
1 0 %
off
4 0
9 0 %
NDS8434 Rev. A3
-10V
1.2
-15V
INVERTED
t
f
5 0