MT48LC16M8A2P-75:G Micron Technology Inc, MT48LC16M8A2P-75:G Datasheet - Page 68

• Manufacturer Part Number: MT48LC16M8A2P-75:G
• Description: IC SDRAM 128MBIT 133MHZ 54TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC16M8A2P-75:G

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (16M x 8)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Organization: 16Mx8
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 52:
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_2.fm - Rev. N 1/09 EN
DQML, DQMH
COMMAND
A0–A9, A11
BA0, BA1
DQM /
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
Single WRITE – With Auto Precharge
t CMH
t CKH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP 3
1. For this example, BL = 1.
2. x16: A9 and A11 = “Don’t Care.”
3. Write command not allowed or
x8: A11 = “Don’t Care.”
t CL
NOP 3
T2
t CH
NOP 3
T3
ENABLE AUTO PRECHARGE
t CMS
t DS
COLUMN m 2
BANK
WRITE
T4
D
IN
t CMH
t DH
m
68
t WR
t
RAS would be violated.
T5
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T6
NOP
t RP
128Mb: x4, x8, x16 SDRAM
T7
NOP
©1999 Micron Technology, Inc. All rights reserved.
Timing Diagrams
ACTIVE
ROW
ROW
BANK
T8
T9
NOP
DON’T CARE