TN2219A_J25Z Fairchild Semiconductor, TN2219A_J25Z Datasheet

no-image

TN2219A_J25Z

Manufacturer Part Number
TN2219A_J25Z
Description
Transistors Bipolar - BJT NPN Dbl-Dif SI Exptl Plnr
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of TN2219A_J25Z

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
75 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
40 V
Maximum Dc Collector Current
1 A
Dc Collector/base Gain Hfe Min
100
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-226
Continuous Collector Current
1 A
Dc Current Gain Hfe Max
300
Maximum Power Dissipation
1 W
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
1500
1997 Fairchild Semiconductor Corporation
V
V
V
I
T
P
R
R
Symbol
C
Symbol
CEO
CBO
EBO
J
D
This device is for use as a medium power amplifier and switch requiring
collector currents up to 500 mA. Sourced from Process 19. See
PN2222A for characteristics.
*
NPN General Purpose Amplifier
Thermal Characteristics
, T
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Absolute Maximum Ratings*
JC
JA
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
TN2219A
B
Derate above 25 C
(TN2222A)
E
Characteristic
TO-226
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
TN2219A
Max
125
1.0
8.0
50
-55 to +150
Value
6.0
1.0
40
75
Units
Units
W/ C
C/W
C/W
V
V
V
A
C
W

Related parts for TN2219A_J25Z

Related keywords