TN2219A_J25Z Fairchild Semiconductor, TN2219A_J25Z Datasheet - Page 6

• Manufacturer Part Number: TN2219A_J25Z
• Description: Transistors Bipolar - BJT NPN Dbl-Dif SI Exptl Plnr
• Manufacturer: Fairchild Semiconductor

Specifications of TN2219A_J25Z

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 75 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 40 V
• Maximum Dc Collector Current: 1 A
• Dc Collector/base Gain Hfe Min: 100
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-226
• Continuous Collector Current: 1 A
• Dc Current Gain Hfe Max: 300
• Maximum Power Dissipation: 1 W
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 1500

TO-226AE Package Dimensions
TO-226AE (FS PKG Code 95, 99)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.300
For leadformed option ordering,
refer to Tape & Reel data information.
October 1999, Rev. A1
©2000 Fairchild Semiconductor International