TN2219A_J25Z Fairchild Semiconductor, TN2219A_J25Z Datasheet - Page 2

• Manufacturer Part Number: TN2219A_J25Z
• Description: Transistors Bipolar - BJT NPN Dbl-Dif SI Exptl Plnr
• Manufacturer: Fairchild Semiconductor

Specifications of TN2219A_J25Z

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 75 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 40 V
• Maximum Dc Collector Current: 1 A
• Dc Collector/base Gain Hfe Min: 100
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-226
• Continuous Collector Current: 1 A
• Dc Current Gain Hfe Max: 300
• Maximum Power Dissipation: 1 W
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 1500

SWITCHING CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
t
t
t
t
V
V
V
I
I
I
I
h
V
V
OFF CHARACTERISTICS
C
C
h
rb’C
NF
Re(h
Symbol
d
r
s
f
CEX
CBO
EBO
BL
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
fe
obo
ibo
Electrical Characteristics
*
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
C
ie
)
)
)
Delay Time
Rise Time
Storage Time
Fall Time
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage*
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Collector Base Time Constant
Noise Figure
Real Part of Common-Emitter
High Frequency Input Impedance
Parameter
TA = 25°C unless otherwise noted
V
I
V
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
I
I
I
I
f = 1.0 kHz, B
I
f = 300 MHz
C
B1
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
E
C
C
CC
CC
CE
CB
CB
EB
CE
CB
EB
= 150 mA, I
= 10 mA, I
= 10 A, I
= 10 A, I
= 0.1 mA, V
= 1.0 mA, V
= 10 mA, V
= 150 mA, V
= 150 mA, V
= 500 mA, V
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
= 20 mA, V
= 100 A, V
= 1.0 mA, V
= 10 mA, V
= 20 mA, V
= I
= 30 V, V
= 30 V, I
= 60 V, I
= 3.0 V, I
= 60 V, V
= 60 V, V
= 60 V, I
= 0.5 V, I
= 10 V, I
B2
Test Conditions
= 15 mA
E
C
B
E
C
E
C
BE(OFF)
EB(OFF)
CE
E
B1
EB(OFF)
B
B
B
B
= 0
= 0
CE
CE
C
CB
= 150 mA,
W
= 0
CE
CE
= 0
= 0, T
CE
CE
CE
CE
= 0
CE
= 0, f = 100 kHz
= 15 mA
= 50 mA
= 1.0 mA
= 5.0 mA
= 0, f = 100 kHz
= 10 V
= 15 mA
= 1.0 kHz
NPN General Purpose Amplifier
= 10 V
= 10 V
= 20 V, f= 31.8 MHz
= 20 V,
= 10 V
= 1.0 V
= 10 V
= 10 V, R
= 10 V, f = 1.0 kHz
= 10 V, f = 1.0 kHz
= 0.5 V,
= 3.0
= 3.0 V
A
= 150 C
S
= 1.0 k
Min
100
6.0
0.6
40
75
35
50
75
50
40
50
75
Max
225
300
300
375
150
0.3
1.0
1.2
2.0
8.0
4.0
10
25
60
10
10
10
10
20
25
60
(continued)
Units
nA
nA
nA
nA
ns
ns
ns
ns
pF
pF
pS
dB
V
V
V
V
V
V
V
A