PBSS9110Y T/R NXP Semiconductors, PBSS9110Y T/R Datasheet
PBSS9110Y T/R
Specifications of PBSS9110Y T/R
Related parts for PBSS9110Y T/R
PBSS9110Y T/R Summary of contents
Page 1
PBSS9110Y 100 PNP low V Rev. 02 — 22 November 2009 1. Product profile 1.1 General description PNP low V 1.2 Features SOT363 package Low collector-emitter saturation voltage V High collector current capability I High efficiency leading ...
Page 2
... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Ordering information Type number Package Name Description PBSS9110Y - plastic surface mounted package; 6 leads 4. Marking Table 4. Type number PBSS9110Y [ made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS9110Y_2 Product data sheet ...
Page 3
... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint. [2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm pad ...
Page 4
... NXP Semiconductors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter R thermal resistance from junction to ambient in free air th(j-a) R thermal resistance from junction to th(j-s) soldering [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint [2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm ...
Page 5
... NXP Semiconductors (1) (K/W) (2) 2 (3) 10 (4) (5) (6) 10 (7) (8) (9) 1 (10) −1 10 −5 − Mounted on FR4 PCB; mounting pad for collector = 1cm (1) δ (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ Fig 3. Transient thermal impedance as a function of pulse time; typical values ...
Page 6
... NXP Semiconductors 7. Characteristics Table 7. Characteristics ° unless otherwise specified. amb Symbol Parameter I collector-base cut-off CBO current I collector-emitter CES cut-off current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R equivalent CEsat on-resistance V base-emitter BEsat saturation voltage V base-emitter turn-on ...
Page 7
... NXP Semiconductors 600 ( 400 (2) (3) 200 0 −1 −10 −1 −10 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 4. DC current gain as a function of collector current; typical values −1 V CEsat (V) −1 −10 (1) (2) (3) −2 − ...
Page 8
... NXP Semiconductors −10 V BEsat (V) −1 (1) (2) (3) −1 −10 −1 −10 −1 −10 − −55 °C (1) T amb = 25 °C (2) T amb = 100 °C (3) T amb Fig 8. Base-emitter saturation voltage as a function of collector current; typical values CEsat (Ω (1) ...
Page 9
... NXP Semiconductors Fig 12. Collector current as a function of collector-emitter voltage; typical values PBSS9110Y_2 Product data sheet −2 (mA) = − −40.5 (A) −36 −1.6 −31.5 −27 −1.2 −0.8 −0.4 0 −1 −2 −3 0 Rev. 02 — 22 November 2009 PBSS9110Y 100 PNP low V (BISS) transistor ...
Page 10
... NXP Semiconductors 8. Package outline Plastic surface-mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 Fig 13. Package outline PBSS9110Y_2 Product data sheet 100 PNP low ...
Page 11
... Document ID Release date PBSS9110Y_2 20091122 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Table 2 “Discrete • Figure 10 “Equivalent on-resistance as a function of collector current; typical • ...
Page 12
... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
Page 13
... NXP Semiconductors 12. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Legal information 10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 10.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 10 ...