PBSS9110Y T/R NXP Semiconductors, PBSS9110Y T/R Datasheet - Page 11

• Manufacturer Part Number: PBSS9110Y T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS9110Y T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 120 V
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UMT
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS9110Y,115

NXP Semiconductors
9. Revision history
Table 8.
PBSS9110Y_2
Product data sheet
Document ID
PBSS9110Y_2
Modifications:
PBSS9110Y_1
Revision history
Release date
20091122
20040609
•
•
•
•
•
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This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Table 2 “Discrete
Figure 10 “Equivalent on-resistance as a function of collector current; typical
Figure 11 “Equivalent on-resistance as a function of collector current; typical
Figure 12 “Collector current as a function of collector-emitter voltage; typical
Figure 13 “Package
pinning”: amended
Data sheet status
Product data
Product data
Rev. 02 — 22 November 2009
outline”: updated
100 V, 1 A PNP low V
Change notice
-
-
PBSS9110Y
Supersedes
PBSS9110Y_1
-
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
values”: updated
values”: updated
values”: updated
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