PBSS9110Y T/R NXP Semiconductors, PBSS9110Y T/R Datasheet - Page 2

• Manufacturer Part Number: PBSS9110Y T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS9110Y T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 120 V
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UMT
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS9110Y,115

NXP Semiconductors
2. Pinning information
3. Ordering information
Table 3.
4. Marking
PBSS9110Y_2
Product data sheet
Type number
PBSS9110Y
Ordering information
Package
Name
-
Table 2.
Table 4.
[1]
Pin
1, 2, 5, 6
3
4
Type number
PBSS9110Y
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Description
plastic surface mounted package; 6 leads
Discrete pinning
Marking
Description
collector
base
emitter
Rev. 02 — 22 November 2009
100 V, 1 A PNP low V
Marking code
91*
[1]
Simplified outline
1
6
2
5
4
3
PBSS9110Y
CEsat
Symbol
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
3
1, 2, 5, 6
Version
SOT363
sym030
4
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