PBSS9110Y T/R NXP Semiconductors, PBSS9110Y T/R Datasheet - Page 10

• Manufacturer Part Number: PBSS9110Y T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS9110Y T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 120 V
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UMT
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS9110Y,115

NXP Semiconductors
8. Package outline
Fig 13. Package outline
PBSS9110Y_2
Product data sheet
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT363
1.1
0.8
A
max
0.1
A 1
6
1
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
2
5
2.2
1.8
b p
D
JEDEC
1.35
1.15
E
4
3
Rev. 02 — 22 November 2009
REFERENCES
0
1.3
e
w
B
M
B
0.65
e
1
SC-88
JEITA
scale
1
H E
2.2
2.0
A
0.45
0.15
L p
A 1
100 V, 1 A PNP low V
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
Q
0.1
PBSS9110Y
y
A
CEsat
c
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
X
v
ISSUE DATE
M
04-11-08
06-03-16
A
SOT363
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