PBSS9110Y T/R NXP Semiconductors, PBSS9110Y T/R Datasheet - Page 5

• Manufacturer Part Number: PBSS9110Y T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS9110Y T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 120 V
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UMT
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS9110Y,115

NXP Semiconductors
PBSS9110Y_2
Product data sheet
Fig 3.
(K/W)
(10) δ = 0
Z
10
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
th
10
10
10
−1
1
3
2
10
Mounted on FR4 PCB; mounting pad for collector = 1cm
Transient thermal impedance as a function of pulse time; typical values
−5
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
10
−4
10
−3
10
Rev. 02 — 22 November 2009
−2
10
2
−1
100 V, 1 A PNP low V
1
10
PBSS9110Y
CEsat
10
2
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
p
001aaa797
(s)
10
3
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