PBSS9110Y T/R NXP Semiconductors, PBSS9110Y T/R Datasheet - Page 6

• Manufacturer Part Number: PBSS9110Y T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS9110Y T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 120 V
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UMT
• Continuous Collector Current: 1 A
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS9110Y,115

NXP Semiconductors
7. Characteristics
Table 7.
T
[1]
PBSS9110Y_2
Product data sheet
Symbol
I
I
I
h
V
R
V
V
f
C
CBO
CES
EBO
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
equivalent
on-resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
Conditions
V
V
T
V
V
V
V
V
V
I
I
I
I
I
I
I
f = 100 MHz
I
f = 1 MHz
C
C
C
C
C
C
C
E
j
CB
CB
CE
EB
CE
CE
CE
CE
= 150 °C
= I
= −250 mA; I
= −500 mA; I
= −1 A; I
= −1 A; I
= −1 A; I
= −1 A; V
= −50 mA; V
= −4 V; I
= −80 V; I
= −80 V; I
= −80 V; V
= −5 V; I
= −5 V; I
= −5 V; I
= −5 V; I
e
= 0 A; V
B
B
B
Rev. 02 — 22 November 2009
CE
C
= −100 mA
= −100 mA
= −100 mA
C
C
C
C
E
E
= 0 A
CB
= −1 mA
= −250 mA
= −0.5 A
= −1 A
= −5 V
CE
BE
B
B
= 0 A
= 0 A;
= −25 mA
= −50 mA
= −10 V;
= 0 V
= −10 V;
[1]
[1]
[1]
100 V, 1 A PNP low V
Min
-
-
-
-
150
150
150
125
-
-
-
-
-
-
100
-
Typ
-
-
-
-
-
-
-
-
-
-
-
170
-
-
-
-
PBSS9110Y
CEsat
Max
−100
−50
−100
−100
-
-
450
-
−120
−180
−320
320
−1.1
−1.0
-
17
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Unit
nA
μA
nA
nA
mV
mV
mV
mΩ
V
V
MHz
pF
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