MT48LC4M32B2TG-7:G Micron Technology Inc, MT48LC4M32B2TG-7:G Datasheet - Page 55

IC SDRAM 128MBIT 143MHZ 86TSOP

MT48LC4M32B2TG-7:G

Manufacturer Part Number
MT48LC4M32B2TG-7:G
Description
IC SDRAM 128MBIT 143MHZ 86TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC4M32B2TG-7:G

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
128M (4Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Organization
4Mx32
Density
128Mb
Address Bus
14b
Access Time (max)
17/8/5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
175mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48LC4M32B2TG-7:G
Manufacturer:
micron
Quantity:
415
Part Number:
MT48LC4M32B2TG-7:G
Manufacturer:
MICRONAS
Quantity:
20 000
Figure 38:
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
Single READ – Without Auto Precharge
DQML, DQMH
COMMAND
A0–A9, A11
BA0, BA1
Notes:
DQM /
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
1. For this example, BL = 4, CL = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. x16: A9 and A11 = “Don’t Care”
ACTIVE
T0
ROW
ROW
BANK
x32: A8, A9,and A11 = “Don’t Care”
See Table 18 on page 46.
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
T1
NOP
DISABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m 2
T2
BANK
READ
t CH
t CMH
CAS Latency
55
SINGLE BANK
PRECHARGE
ALL BANKS
BANK
T3
t LZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t RP
t AC
T4
NOP
D
OUT
t OH
t HZ
m
ROW
BANK
ROW
T5
ACTIVE
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
DON’T CARE
UNDEFINED
Timing Diagrams

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