MT46V64M16TG-6T IT:A TR Micron Technology Inc, MT46V64M16TG-6T IT:A TR Datasheet - Page 40

• Manufacturer Part Number: MT46V64M16TG-6T IT:A TR
• Description: IC DDR SDRAM 1GBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V64M16TG-6T IT:A TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 1G (64M x 16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 66-TSOP
• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 275mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

READ
Figure 16:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
READ Command
Note:
The READ command is used to initiate a burst read access to an active row, as shown in
Figure 16 on page 40. The value on the BA0, BA1 inputs selects the bank, and the address
provided on inputs A0–Ai (where Ai is the most significant column address bit for a given
density and configuration, see Table 2 on page 2) selects the starting column location.
BA0, BA1
Address
RAS#
CAS#
WE#
CK#
CKE
CS#
EN AP = enable auto precharge; DIS AP = disable auto precharge.
A10
CK
HIGH
DIS AP
EN AP
Bank
Col
Don’t Care
40
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x4, x8, x16 DDR SDRAM
©2003 Micron Technology, Inc. All rights reserved.
Commands