MT28F320J3RG-11 GMET Micron Technology Inc, MT28F320J3RG-11 GMET Datasheet - Page 46

• Manufacturer Part Number: MT28F320J3RG-11 GMET
• Description: IC FLASH 32MBIT 110NS 56TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT28F320J3RG-11 GMET

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 110ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 56-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 27: AC Characteristics–Read-Only Operations
Notes: 1, 2, 4; extended temperature (-40ºC ≤ T
NOTE:
09005aef80b5a323
MT28F640J3.fm – Rev. N 3/05 EN
PARAMETER
CEx HIGH to CEx LOW
Page Address Access Time
1. CEx LOW is defined as the first edge of CE0, CE1, or CE2 that enables the device. CEx HIGH is defined at the first
2. See AC Input/Output Reference Waveforms for the maximum allowable input slew rate.
3. OE# may be delayed up to
4. See Figure 17 on page 44, Transient Input/Output Reference Waveform, for V
5. When reading the Flash array, a faster
6. Sampled, not 100 percent tested.
edge of CE0, CE1, or CE2 that disables the device (see Table 2).
impact on
page 45, Transient Equivalent Testing Load Circuit, for testing characteristics.
or DEVICE IDENTIFIER READs.
t
ACE .
t
ACE–AOE after the first edge of CEx that enables the device (see Table 2) without
t
AOE applies. Non-array READs refer to status register READs, QUERY READs,
A
≤ +85ºC)
SYMBOL DENSITY
t
t
CWH
46
APA
Micron Technology, Inc., reserves the right to change products or specifications without notice.
All
All
V
CC
V
CC
MIN
Q = 2.7V – 3.6V, and Figure 18 on
CC
0
Q = 2.7V–3.6V
128Mb, 64Mb, 32Mb
= 2.7V–3.6V
Q-FLASH MEMORY
MAX
25
UNITS
ns
ns
©2000 Micron Technology. Inc.
NOTES
6