KA5M0365RTU Fairchild Semiconductor, KA5M0365RTU Datasheet - Page 5

• Manufacturer Part Number: KA5M0365RTU
• Description: IC SWIT PWM CM OVP UVLO HV TO220
• Manufacturer: Fairchild Semiconductor

Specifications of KA5M0365RTU

• Frequency Range: 61 ~ 73kHz
• Voltage - Input: 9 ~ 30 V
• Voltage - Output: 650V
• Power (watts): 75W
• Operating Temperature: 25°C ~ 160°C
• Package / Case: TO-220-4 Full Pack
• Output Voltage: 4.8 V to 5.2 V
• Output Current: 3 A
• Switching Frequency: 70 KHz
• Operating Temperature Range: - 25 C to + 85 C
• Mounting Style: Through Hole
• Duty Cycle (max): 82 %
• Peak Reflow Compatible (260 C): Yes
• Frequency: 100kHz
• Supply Voltage Max: 30V
• Leaded Process Compatible: Yes
• No. Of Pins: 4
• No. Of Outputs: 1
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Characteristics(SenseFET part)
(KA5H0365R, KA5M0365R, KA5L0365R)
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 3. On-Resistance vs. Drain Current
700
600
500
400
300
200
100
0.1
10
0
7
6
5
4
3
2
1
0
1
10
0
0
Figure 1. Output Characteristics
Top :
Bottom:4.5V
V
8.0V
7.0V
6.0V
5.5V
5.0V
GS
15V
10V
C
C
C
oss
iss
rss
1
1
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
,Drain Current [A]
2
V gs=10V
C
C
C
iss
oss
rss
10
3
1
V gs=20V
= C
= C
= C
@ Notes:
1. 300
2. T
gs
gd
ds
10
+ C
C
+ C
= 25
µ
gd
s Pulse Test
gd
o
(C
@ Note : Tj=25 ℃
C
4
ds
= shorted)
5
Figure 6. Gate Charge vs. Gate-Source Voltage
Figure 4. Source-Drain Diode Forward Voltage
0.01
10
0.1
0.1
8
6
4
2
0
10
1
1
0
2
Figure 2. Transfer Characteristics
25
0.4
150
o
C
o
C
150
5
o
C
4
V
V
DS
V
SD
GS
=520V
0.6
, Source-Drain Voltage [V]
V
Q
, Gate-Source Voltage [V]
DS
G
=320V
,Total Gate Charge [nC]
V
-25
DS
o
=130V
10
C
25
o
C
6
0.8
15
@ Notes :
@ Notes:
1. VG S = 0 V
2. 300
1. V
2. 300
DS
8
µ
1.0
µ
= 30V
s Pulse Test
s Pulse Test
@ Note : I
KA5X03XX-SERIES
20
D
=3.0A
1.2
10
25
5