KA5M0365RTU Fairchild Semiconductor, KA5M0365RTU Datasheet - Page 7
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KA5M0365RTU
Manufacturer Part Number
KA5M0365RTU
Description
IC SWIT PWM CM OVP UVLO HV TO220
Manufacturer
Fairchild Semiconductor
Datasheet
1.KA5M0365RYDTU.pdf
(14 pages)
Specifications of KA5M0365RTU
Frequency Range
61 ~ 73kHz
Voltage - Input
9 ~ 30 V
Voltage - Output
650V
Power (watts)
75W
Operating Temperature
25°C ~ 160°C
Package / Case
TO-220-4 Full Pack
Output Voltage
4.8 V to 5.2 V
Output Current
3 A
Switching Frequency
70 KHz
Operating Temperature Range
- 25 C to + 85 C
Mounting Style
Through Hole
Duty Cycle (max)
82 %
Peak Reflow Compatible (260 C)
Yes
Frequency
100kHz
Supply Voltage Max
30V
Leaded Process Compatible
Yes
No. Of Pins
4
No. Of Outputs
1
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KA5M0365RTU
Manufacturer:
Fairchild Semiconductor
Quantity:
1 871
Company:
Part Number:
KA5M0365RTU
Manufacturer:
NXP
Quantity:
7 000
Company:
Part Number:
KA5M0365RTU
Manufacturer:
Fairchi/ON
Quantity:
43 000
Typical Performance Characteristics
(KA5H0380R, KA5M0380R, KA5L0380R)
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 3. On-Resistance vs. Drain Current
1000
10
10
10
900
800
700
600
500
400
300
200
100
-1
1
0
0
8
7
6
5
4
3
2
1
0
10
0
0
Figure 1. Output Characteristics
Top : 15V
Bottom:4.5V
V
8.0V
7.0V
6.0V
5.5V
5.0V
GS
10V
C
C
C
10
oss
iss
rss
0
1
Fig3. On-Resistance vs. Drain Current
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
,Drain Current
Vgs=10V
2
C
C
C
iss
oss
rss
Vgs=20V
= C
= C
= C
10
gs
gd
ds
1
10
@ Notes:
+ C
+ C
1
1. 300
2. T
3
gd
gd
C
µ
= 25
(C
s Pulse Test
ds
o
C
= shorted)
@ Note : Tj=25 ℃
4
(Continued)
Figure 6. Gate Charge vs. Gate-Source Voltage
Figure 4. Source-Drain Diode Forward Voltage
0.1
10
10
10
10
10
1
8
6
4
2
0
0.4
-1
1
0
0
2
Figure 2. Thansfer Characteristics
25
150
o
5
C
150
o
C
o
C
4
V
V
DS
SD
V
Q
V
GS
DS
=640V
0.6
G
, Source-Drain Voltage [V]
10
,Total Gate Charge [nC]
=400V
, Gate-Source Voltage [V]
V
DS
-25
=160V
o
C
15
6
25
o
C
0.8
20
@ Notes:
1. V
2. 300
@ Notes:
@ Note : I
1. V
2. 300
DS
µ
= 30 V
GS
8
s Pulse Test
µ
= 0V
s Pulse Test
D
25
=3.0A
KA5X03XX-SERIES
1.0
30
10
7