FSFR2100 Fairchild Semiconductor, FSFR2100 Datasheet
FSFR2100
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FSFR2100 Summary of contents
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... The ZVS also reduces the switching noise noticeably, which allows a small-sized Electromagnetic Interference (EMI) filter. The FSFR2100 can be applied to various resonant converter topologies, such as: series resonant, parallel resonant, and LLC resonant converters. Related Resources AN-4151 — ...
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... Application Circuit Diagram Figure 1. Typical Application Circuit (LLC Resonant Half-bridge Converter) Block Diagram © 2007 Fairchild Semiconductor Corporation FSFR2100 • Rev.1.0 LVcc Control CON IC V CTR sense Figure 2. Internal Block Diagram KA431 μ 1.5 s www.fairchildsemi.com ...
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... This pin is the supply voltage of the control IC connection This is the supply voltage of the high-side gate-drive circuit IC This is the drain of the low-side MOSFET. Typically, a transformer is connected to this pin. CTR © 2007 Fairchild Semiconductor Corporation FSFR2100 • Rev.1.0.8 Figure 3. Package Diagram Description 3 www.fairchildsemi.com ...
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... Pulse width is limited by maximum junction temperature. Thermal Impedance T =25°C unless otherwise specified. A Symbol θ Junction-to-Case Center Thermal Impedance (Both MOSFETs Conducting) JC © 2007 Fairchild Semiconductor Corporation FSFR2100 • Rev.1.0.8 =25°C unless otherwise specified. A Parameter -V and V DL CTR Pin to Low-side Drain Voltage (3) ...
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... Control Pin Enable Threshold Voltage CONEN V V-I Converter Threshold Voltage RT f Output Oscillation Frequency OSC DC Output Duty Cycle f Internal Soft-Start Initial Frequency SS t Internal Soft-Start Time SS © 2007 Fairchild Semiconductor Corporation FSFR2100 • Rev.1.0.8 Test Conditions I =200μ =200μ =10V (6) V =0V Diode ...
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... Dead-Time Control Section (7) D Dead Time T Notes: 6. This parameter, although guaranteed, is not tested in production. 7. These parameters, although guaranteed, are tested only in EDS (wafer test) process. © 2007 Fairchild Semiconductor Corporation FSFR2100 • Rev.1.0.8 (Continued) Test Conditions V =4V CON V > 3.5V CON L-V > 21V CC Δ ...
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... Temp ( O C) Figure 6. High-Side V vs. Temperature 1.1 1.05 1 0.95 0.9 -50 - Temp ( O Figure 8. Low-Side V vs. Temperature © 2007 Fairchild Semiconductor Corporation FSFR2100 • Rev.1.0.8 =25ºC. A 1.1 1.05 1 0.95 0 100 O C) Figure 5. Switching Frequency vs. Temperature 1.1 1.05 1 0.95 0 100 (HV ) Start ...
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... Temp ( O Figure 12. LV OVP Voltage vs. Temperature CC 1.1 1.05 1 0.95 0.9 -50 - Temp ( O Figure 14. CON Pin Enable Voltage vs. Temperature © 2007 Fairchild Semiconductor Corporation FSFR2100 • Rev.1.0.8 (Continued) =25ºC. A 1.1 1.05 1 0.95 0 100 C) 1.1 1.05 1 0.95 0 100 C) 1.1 1.05 1 0.95 0.9 ...
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... Functional Description 1. Basic Operation FSFR2100 is designed to drive high-side and low-side MOSFETs complementarily with 50% duty cycle. A fixed dead time of 350ns is introduced between consecutive transitions, as shown in Figure 16. Figure 16. MOSFETs Gate Drive Signal 2. Internal Oscillator FSFR2100 employs a current-controlled oscillator, as shown in Figure 17. Internally, the voltage of R ...
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... Figure 19. FSFR2100 also has an internal soft-start for 3ms to reduce the current overshoot during the initial cycles, which adds 40kHz to the initial frequency of the external soft-start circuit, as shown in Figure 20. The initial frequency of the soft-start is given as: Ω Ω 5 × ISS 100 40 ( ...
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... Current Sensing Current Sensing Using Resistor: FSFR2100 senses drain current as a negative voltage, as shown in Figure 24 and Figure 25. Half-wave sensing allows low power dissipation in the sensing resistor, while full-wave sensing has less switching noise in the sensing signal Control sense Ids Figure 24. Half-Wave Sensing ...
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... sense p-p where V is the amplitude of the resonant capacitor Cr voltage. © 2007 Fairchild Semiconductor Corporation FSFR2100 • Rev.1.0.8 6.6 LV reaches 23V, OVP is triggered. This protection used when auxiliary winding of the transformer to supply FPS™ is utilized. CC 6.7 the control IC in one package makes it easy for the control IC to detect the abnormal over-temperature of the MOSFETs ...
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... Application FPS™ Device LCD TV FSFR2100 Features High efficiency ( >94% at 400V Reduced EMI noise through zero-voltage-switching (ZVS) Enhanced system reliability with various protection functions © 2007 Fairchild Semiconductor Corporation FSFR2100 • Rev.1.0.8 Input Voltage Range Rated Output Power 390V DC (340~400V ) DC input) DC Figure 29 ...
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... Primary-Side Inductance (L Primary-Side Effective Leakage (L For more detailed information regarding the transformer, visit sales@santronics-usa.com or +1-408-734-1878 (Sunnyvale, California USA). © 2007 Fairchild Semiconductor Corporation FSFR2100 • Rev.1.0.8 (Continued) Figure 30. Transformer Construction Wire 0.08φ×88 (Litz Wire) 0.08φ×234 (Litz Wire) 0.08φ ...
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... Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. © 2007 Fairchild Semiconductor Corporation FSFR2100 • Rev.1.0.8 Figure 31. 9-SIP Package 15 www.fairchildsemi.com ...
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... Fairchild Semiconductor Corporation FSFR2100 • Rev.1.0.8 16 www.fairchildsemi.com ...