BTS3410G Infineon Technologies, BTS3410G Datasheet - Page 3

• Manufacturer Part Number: BTS3410G
• Description: IC PWR SW DUAL 42V 1.3A 8PWRSOIC
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of BTS3410G

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 1.3A
• Current - Peak Output: 7.5A
• Voltage - Supply: 2.2 V ~ 10 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTS3410G; BTS3410GNT; BTS3410GT; BTS3410GT; BTS3410GTR; BTS3410GXT; SP000014334; SP000305178

Datasheet
1 not subject to production test, specified by design
2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain
3 V
5 not subject to production test, calculated by R
connection. PCB mounted vertical without blown air.
Thermal resistance
junction - ambient:
@ 6 cm
Maximum Ratings at T
Parameter
Drain source voltage
Drain source voltage for short circuit protection
T
Continuous input current
-0.2V £ V
V
Operating temperature
Storage temperature
Power dissipation
T
Unclamped single pulse inductive energy
each channel
Load dump protection V
V
R
Electrostatic discharge voltage
according to Jedec norm
EIA/JESD22-A114-B, Section 4
j
A
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
IN
IN
L
= -40...150 °C
= 85 °C
= 9 W, V
< -0.2V or V
= 0 and 10 V, t
2
IN
cooling area
A
£ 10V
= 13.5 V
IN
2)5)
> 10V
d
= 400 ms, R
per channel
2)
j
LoadDump
1)
= 25°C, unless otherwise specified
both channels on
1)
one channel on
I
(Human Body Model)
1)3)
= 2 W,
= V
THJA and R ds(on)
A
1)
+ V
3
S
1)
R
Symbol
V
V
I
T
T
P
E
V
V
IN
j
stg
DS
DS(SC)
tot
AS
LD
ESD
thJA
Smart Low Side Power Switch
-55 ... +150
-40 ...+150
| I
no limit
Value
IN
100
160
150
0.8
42
18
50
HITFET BTS 3410G
2
| £ 2
Rev. 1.3, 2007-11-06
K/W
Unit
V
mA
°C
W
mJ
V
kV