BTS3410G Infineon Technologies, BTS3410G Datasheet - Page 4

• Manufacturer Part Number: BTS3410G
• Description: IC PWR SW DUAL 42V 1.3A 8PWRSOIC
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of BTS3410G

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 1.3A
• Current - Peak Output: 7.5A
• Voltage - Supply: 2.2 V ~ 10 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DSO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTS3410G; BTS3410GNT; BTS3410GT; BTS3410GT; BTS3410GTR; BTS3410GXT; SP000014334; SP000305178

Datasheet
5 not subject to production test, calculated by R
1 not subject to production test, specified by design
2 Device switched on into existing short circuit (see diagram Determination of I
and a short circuit occurs, these values might be exceeded for max. 50 µs.
Electrical Characteristics
Parameter
at T
Characteristics
Drain source clamp voltage
T
Off-state drain current T
V
Input threshold voltage
I
I
On state input current
On-state resistance
V
V
On-state resistance
V
V
Nominal load current per channel
V
one channel on
both channels on
Current limit (active if V
V
D
D
j
DS
IN
IN
IN
IN
DS
IN
= - 40 ...+ 150, I
= 0.3 mA, T
= 0.3 mA, T
j
= 5 V, I
= 5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
= 32 V, V
= 0.5 V, T
= 25°C, unless otherwise specified
D
D
D
D
= 1.4 A, T
= 1.4 A, T
DS
IN
j
j
= 1.4 A, T
= 1.4 A, T
j
= 25 °C
= 150 °C
< 150°C, V
= 0 V
= 12 V, t
D
= 10 mA
j
j
DS
= 25 °C
= 150 °C
j
j
j
m
= 25 °C
= 150 °C
= -40 ... +150°C
>2.5 V)
IN
= 200 µs
= 10 V, T
5)
2)
A
THJA and R ds(on)
= 85 °C,
4
Symbol
V
I
V
I
R
R
I
I
DSS
IN(on)
D(Nom)
D(lim)
DS(AZ)
IN(th)
DS(on)
DS(on)
Smart Low Side Power Switch
min.
1.3
0.8
1.3
42
1
5
D(lim) ). If the device is in on cond
-
-
-
-
-
-
Values
1.65
190
350
150
280
typ.
1.5
1.7
7.5
HITFET BTS 3410G
1.3
10
-
-
Rev. 1.3, 2007-11-06
max.
240
480
200
400
2.2
55
10
30
10
-
-
-
Unit
V
µA
V
µA
mW
A