FDR8521L Fairchild Semiconductor, FDR8521L Datasheet - Page 150
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDR8521L
Manufacturer Part Number
FDR8521L
Description
MOSFET P-CH 20V SSOT-8
Manufacturer
Fairchild Semiconductor
Type
High Side Switchr
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8521L
Number Of Outputs
1
Rds (on)
70 mOhm
Internal Switch(s)
Yes
Current Limit
2.9A
Voltage - Input
3 ~ 20 V
Operating Temperature
-55°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR8521L
FDR8521LTR
FDR8521LTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR8521L
Manufacturer:
IXYS
Quantity:
10 000
- Current page: 150 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Transient Voltage Suppressors
DO-15
SA5V0A
SA5V0CA
P6KE6V8A
P6KE6V8CA
SA6V0A
SA6V0CA
P6KE7V5A
P6KE7V5CA
SA6V5A
SA6V5CA
SA7V0A
SA7V0CA
P6KE8V2A
P6KE8V2CA
SA7V5A
SA7V5CA
P6KE9V1A
P6KE9V1CA
SA8V0A
SA8V0CA
SA8V5A
SA8V5CA
P6KE10A
P6KE10CA
SA9V0A
SA9V0CA
P6KE11A
P6KE11CA
SA10A
SA10CA
P6KE12A
P6KE12CA
SA11A
SA11CA
Products
Voltage (V)
Stand-off
Reverse
V
7.02
7.02
7.78
7.78
8.55
8.55
10.2
10.2
RWM
5.8
5.8
6.4
6.4
6.5
6.5
7.5
7.5
8.5
8.5
9.4
9.4
10
10
11
11
5
5
6
6
7
7
8
8
9
9
V
Min
6.45
6.45
6.67
6.67
7.13
7.13
7.22
7.22
7.78
7.78
7.79
7.79
8.33
8.33
8.65
8.65
8.89
8.89
9.44
9.44
10.5
10.5
11.1
11.1
11.4
11.4
12.2
12.2
6.4
6.4
9.5
9.5
10
10
BR
Voltage (V)
Breakdown
Max
7.14
7.14
7.37
7.37
7.88
7.88
7.98
7.98
8.61
8.61
9.21
9.21
9.55
9.55
9.83
9.83
10.4
10.4
10.5
10.5
11.1
11.1
11.6
11.6
12.3
12.3
12.6
12.6
13.5
13.5
8.6
8.6
7
7
Condition
I
T
Test
(mA)
10
10
10
10
10
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Voltage @ I
Max Clamping
2-145
10.5
10.5
10.3
10.3
11.3
11.3
11.2
11.2
12.1
12.1
12.9
12.9
13.4
13.4
13.6
13.6
14.4
14.4
14.5
14.5
15.4
15.4
15.6
15.6
16.7
16.7
18.2
18.2
9.2
9.2
V
12
17
12
17
C
PPM
(V)
Discrete Power Products –
Surge Current (A)
Max Peak Pulse
I
54.3
54.3
57.1
57.1
48.5
48.5
53.1
53.1
44.7
44.7
41.7
41.7
38.8
38.8
36.7
36.7
34.7
34.7
32.5
32.5
29.4
29.4
27.4
27.4
PPM
50
50
45
45
41
41
38
38
36
36
Leakage @ V
I
R
Max Reverse
1200
1000
2000
1200
1000
(µA)
600
600
500
400
800
150
300
200
400
100
100
50
50
25
50
10
20
10
20
10
10
5
5
1
1
5
5
1
1
RWM
Diodes and Rectifiers
P
PPM
500
500
600
600
500
500
600
600
500
500
500
500
600
600
500
500
600
600
500
500
500
500
600
600
500
500
600
600
500
500
600
600
500
500
(W)
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Direction
Related parts for FDR8521L
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![SM2G50US60](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FTP5027RTU](/photos/16/13/161378/to220_tmb.jpg)
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
![FTP5021OTU](/photos/16/13/161378/to220_tmb.jpg)
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
![FDMS86300DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3006SDC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3008SDC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3016DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86101DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDD86113LZ](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86500DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8558S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8560S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8570S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMC86116LZ](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86250](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: