FDR8521L Fairchild Semiconductor, FDR8521L Datasheet - Page 82
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDR8521L
Manufacturer Part Number
FDR8521L
Description
MOSFET P-CH 20V SSOT-8
Manufacturer
Fairchild Semiconductor
Type
High Side Switchr
Datasheet
1.EGP10A.pdf
(214 pages)
Specifications of FDR8521L
Number Of Outputs
1
Rds (on)
70 mOhm
Internal Switch(s)
Yes
Current Limit
2.9A
Voltage - Input
3 ~ 20 V
Operating Temperature
-55°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
8-SSOT, SuperSOT-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDR8521L
FDR8521LTR
FDR8521LTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDR8521L
Manufacturer:
IXYS
Quantity:
10 000
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www.fairchildsemi.com
Bipolar Power Transistors – Darlington Transistors
Products
TO-126 NPN Configuration
KSD985
KSD986
KSD1692
BD675A
BD677A
KSE800
KSE801
MJE800
MJE801
BD679A
KSE802
KSE803
MJE802
MJE803
BD681
TO-126 PNP Configuration
KSB794
KSB795
KSB1149
BD676A
BD678A
KSE700
KSE701
MJE700
MJE701
BD680A
KSE702
KSE703
MJE702
MJE703
BD682
TO-220 NPN Configuration
TIP110
TIP111
I
C
1.5
1.5
1.5
1.5
3
4
4
4
4
4
4
4
4
4
4
4
4
3
4
4
4
4
4
4
4
4
4
4
4
4
2
2
(A)
V
CEO
100
100
100
100
60
80
45
60
60
60
60
60
80
80
80
80
80
60
80
45
60
60
60
60
60
80
80
80
80
80
60
80
(V) V
CBO
150
150
150
100
100
100
45
60
60
60
60
60
80
80
80
80
80
60
80
45
60
60
60
60
60
80
80
80
80
80
60
80
(V) V
EBO
8
8
8
5
5
5
5
5
5
5
5
5
5
5
5
8
8
8
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V)
P
C
10
10
15
14
14
14
14
14
14
14
14
14
14
14
14
10
10
15
14
14
14
14
14
14
14
14
14
14
14
14
50
50
(W)
2000
2000
2000
2000
2000
2000
Min
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
750
500
500
2-77
Discrete Power Products –
30000
30000
20000
30000
30000
20000
Max
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@I
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
C
1
1
2
2
2
2
2
2
2
1
1
2
2
2
2
2
2
2
2
2
(A) @V
Bold = New Products (introduced January 2003 or later)
CE
2
2
2
3
3
3
3
3
3
3
3
3
3
3
3
2
2
2
3
3
3
3
3
3
3
3
3
3
3
3
4
4
(V) Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.9
0.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
1.5
1.5
1.2
2.8
2.8
2.5
2.8
2.5
2.8
2.8
2.5
2.8
2.5
2.8
2.5
1.5
1.5
1.2
2.8
2.8
2.5
2.8
2.5
2.8
2.8
2.5
2.8
2.5
2.8
2.5
2.5
2.5
V
CE
(sat)
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
C
1
1
2
2
2
2
2
2
2
1
1
2
2
2
2
2
2
2
2
2
(A) @I
0.001
0.001
0.002
0.001
0.001
0.002
0.008
0.008
0.04
0.04
0.04
0.04
0.04
0.03
0.04
0.03
0.04
0.03
0.04
0.04
0.04
0.04
0.04
0.03
0.04
0.03
0.04
0.03
0.03
0.03
0.03
0.03
B
(A)
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