TLE7810G Infineon Technologies, TLE7810G Datasheet - Page 50

• Manufacturer Part Number: TLE7810G
• Description: IC LDO VREG/LIN TXRX DSO-28
• Manufacturer: Infineon Technologies

Specifications of TLE7810G

• Applications: Special Purpose
• Voltage - Supply: 3.9 V ~ 27 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DSO-28
• Data Bus Width: 8 bit
• Program Memory Type: Flash
• Program Memory Size: 16 KB
• Data Ram Size: 768 B
• Interface Type: SPI, SSC, UART
• Maximum Clock Frequency: 4 MHz
• Number Of Timers: 3
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Supply: -
• Lead Free Status / Rohs Status: Details
• Other names: SP000313890

18.3
For flash programming the transmission rate of the integrated LIN transceiver can be changed to maximum
115 kBaud via SPI command. A dedicated BROM routine of the XC866 takes care of periodically servicing the
watchdog during this LIN-Fast-Mode. Further details are available in the XC866 User’s Manual.
Figure 20
18.4
T
•
•
•
•
•
•
The total power dissipation can be calculated from:
P
18.5
Tests for ESD robustness according to IEC61000-4-2 “gun test” (150pF, 330Ω) have been performed. The results
and test condition are available in a test report.
Table 15
Performed Test
ESD at pin LIN, V
ESD at pin LIN, V
1) ESD susceptibility “ESD GUN” according LIN EMC 1.3 Test Specification, Section 4.3. (IEC 61000-4-2) -Tested by external
Data Sheet
LIN FLASH mode on
LIN FLASH mode off
J
D
=
=
T
T
P
P
P
R
test house (IBEE Zwickau, EMC Test report Nr. ).
T
J
A
D
INT
IO
thJA
P
A
= Junction temperature [°C]
= Ambient temperature [°C]
= Total chip power dissipation [W]
INT
= Power dissipation caused by I/O currents [W]
+ (
= Chip internal power dissipation [W]
= Package thermal resistance [K/W]; junction-ambient
+
P
P
D
Input Data
Flash Program Mode via LIN-Fast-Mode
LIN Flash mode SPI command
Thermal Resistance
ESD Tests
ESD “GUN test”
IO
×
R
S
S
, MON4 versus GND
, MON4 versus GND
thJA
)
MSB
15 14 13 12 11 10
1
0
0
0
0
0
0
0
≥ +8
≤ -8
Result
0
0
0
0
50
Unit
kV
kV
9
0
0
8
0
0
Remarks
1)
1)
Positive pulse
Negative pulse
7
0
0
6
0
0
5
0
0
4
1
1
Application Information
Rev. 3.01, 2008-04-15
3
0
0
2
0
0
TLE7810G
1
0
0
LSB
0
0
0
(8)
(9)