FQPF10N60C Fairchild Semiconductor, FQPF10N60C Datasheet

MOSFET N-CH 600V 9.5A TO-220F

FQPF10N60C

Manufacturer Part Number
FQPF10N60C
Description
MOSFET N-CH 600V 9.5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF10N60C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
730 mOhm @ 4.75A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
9.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
57nC @ 10V
Input Capacitance (ciss) @ Vds
2040pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.73 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9.5 A
Power Dissipation
50000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2007 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev. C
FQP10N60C / FQPF10N60C
600V N-Channel MOSFET
Features
• 9.5A, 600V, R
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
Symbol
Symbol
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
DS(on)
D
S
= 0.73Ω @V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
TO-220
FQP Series
GS
C
Parameter
Parameter
= 25°C)
= 10 V
C
C
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
FQP10N60C
FQP10N60C
TO-220F
FQPF Series
1.25
62.5
156
9.5
5.7
0.8
0.5
38
-55 to +150
15.6
± 30
600
700
300
9.5
4.5
FQPF10N60C
FQPF10N60C
G
9.5 *
5.7 *
62.5
38 *
0.4
2.5
50
--
QFET
April 2007
S
D
www.fairchildsemi.com
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

Related parts for FQPF10N60C

FQPF10N60C Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FQP10N60C / FQPF10N60C Rev. C Description = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

Page 2

... DD G ≤ 9.5A, di/dt ≤ 200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQP10N60C / FQPF10N60C Rev. C Package Reel Size TO-220 -- TO-220F -- T = 25°C unless otherwise noted C Test Conditions = 250 µA ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 3000 2500 C iss 2000 C oss 1500 1000 C rss 500 Drain-Source Voltage [V] DS FQP10N60C / FQPF10N60C Rev. C Figure 2. Transfer Characteristics * Notes : µ 1. 250 s Pulse Test ° Figure 4. Body Diode Forward Voltage V = 20V GS ° * Note : Figure 6. Gate Charge Characteristics ...

Page 4

... T = 150 Single Pulse - Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature 100 T , Case Temperature [ C FQP10N60C / FQPF10N60C Rev. C (Continued) Figure 8. On-Resistance Variation * Notes : µ 250 A D 100 150 200 ° C] Figure 9-2. Maximum Safe Operating Area µ µ 100 125 150 ° ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FQP10N60C Figure 11-2. Transient Thermal Response Curve for FQPF10N60C FQP10N60C / FQPF10N60C Rev. C (Continued ° θ θ ° θ θ www.fairchildsemi.com ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms FQP10N60C / FQPF10N60C Rev. C Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FQP10N60C / FQPF10N60C Rev. C Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions 9.90 ø3.60 ±0.10 1.27 2.54TYP ±0.20 [2.54 ] 10.00 FQP10N60C / FQPF10N60C Rev. C TO-220 ±0.20 (8.70) ±0.10 ±0.10 1.52 ±0.10 0.80 2.54TYP ±0.20 [2.54 ] ±0.20 8 ±0.20 4.50 +0.10 1.30 –0.05 +0.10 ±0.20 0.50 2.40 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP ±0.20 [2.54 ] FQP10N60C / FQPF10N60C Rev. C (Continued) TO-220F ±0.20 ±0.10 10.16 ø3.18 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 9.40 9 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...

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